ACS Publications. Most Trusted. Most Cited. Most Read
Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array
My Activity
    Article

    Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array
    Click to copy article linkArticle link copied!

    • Ayoung Ham
      Ayoung Ham
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Ayoung Ham
    • Wonbae Ahn
      Wonbae Ahn
      Graphene/2D Materials Research Center, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Wonbae Ahn
    • Jungyeop Oh
      Jungyeop Oh
      Graphene/2D Materials Research Center, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Jungyeop Oh
    • Gichang Noh
      Gichang Noh
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Gichang Noh
    • Saeyoung Oh
      Saeyoung Oh
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Saeyoung Oh
    • Minsoo Kang
      Minsoo Kang
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      More by Minsoo Kang
    • Hyun-Jun Chai
      Hyun-Jun Chai
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
    • Joon Young Kwak
      Joon Young Kwak
      Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
    • Seunghwan Seo*
      Seunghwan Seo
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      *Email: [email protected]
    • Sung-Yool Choi*
      Sung-Yool Choi
      Graphene/2D Materials Research Center, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      *Email: [email protected]
    • Kibum Kang*
      Kibum Kang
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
      *Email: [email protected]
      More by Kibum Kang
    Other Access OptionsSupporting Information (1)

    ACS Nano

    Cite this: ACS Nano 2025, XXXX, XXX, XXX-XXX
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.4c13613
    Published January 30, 2025
    © 2025 American Chemical Society

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    Bismuth oxyselenide (Bi2O2Se) stands as a highly promising layered semiconductor with outstanding optical, electrical, and thermal properties. For the practical application of the material toward the devices, growing Bi2O2Se directly on the amorphous substrate at low temperatures (<400 °C) is essential; however, the negatively charged bottom Se layer originating from alternating stacks of Se2– and [Bi2O2]2+ has hindered this process. In this work, we report the method for synthesizing a Bi2O2Se film on amorphous alumina (AlOx) directly at 350 °C by using chemical solution deposition. Our key strategy is to enhance the wettability of bismuth precursor solutions with the oxide first and then to selenize Bi2O3 in the gas phase. CSD-grown Bi2O2Se at 350 °C shows a uniform crystalline quality and chemical stoichiometry. Furthermore, we explore the applicability of Bi2O2Se toward dynamic memristors of a physical reservoir of reservoir computing systems. The fabricated Ag/Bi2O2Se/AlOx/Al-stacked dynamic memristors exhibit volatile memory properties, showing reasonable cycle-to-cycle and device-to-device variations that ensure reliability of the device operation. Intriguingly, the devices show programmable decay time in the range of microseconds to milliseconds depending on the pulse widths of different scales. Our work reveals an approach to grow Bi2O2Se films on versatile substrates that have great potential for future electronics, especially for low-temperature memristive applications.

    © 2025 American Chemical Society

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.4c13613.

    • Discussion on the ways to enhance cycle-to-cycle and device-to-device variations of Bi2O2Se dynamic memristors; discussion on the failure operational mode of Bi2O2Se dynamic memristors; discussion on device characteristics after thermal treatment; low-temperature growth of Bi2O2Se on amorphous substrate for next-generation BEOL/M3D-compatible architectures; statistical distribution of Bi2O2Se A1g Raman shift at 36 points; Raman spectrum of Bi2O2Se film shows no obvious amorphous carbon peaks, indicating the absence of byproducts; SEM-EDS analysis on Bi2O2Se films; Bi2O2Se on AlOx; additionally investigated overlapped EDS element maps of Bi2O2Se film on AlOx/Al/SiO2 and EDS maps with Al, Bi, O, and Se elements; β-Bi2O3 on SiO2; surface morphology of bare AlOx substrate and CSD Bi2O2Se film; Bi2O2Se A1g Raman maps showing spatial uniformity; wetting and dewetting on substrates; β-Bi2O3 on AlOx; current–voltage curve of a device with Al top metal; failure operational mode of Bi2O2Se dynamic memristor device; initial and 1-year-layer volatile memory characteristics of Bi2O2Se dynamic memristor; cycle-to-cycle variation of Bi2O2Se dynamic memristor; pulse responses of Bi2O2Se dynamic memristor; decaying properties of Bi2O2Se dynamic memristor with respect to temperature; switching characteristics of Bi2O2Se device with respect to temperature; RSs of CSD-grown Bi2O2Se dynamic memristor used to differentiate various temporal inputs for reservoir computing application; conductance level of each sequence input with different pulse widths; patterns prepared by MNIST data sets and Bi2O2Se reservoir; pattern recognition rate of Bi2O2Se reservoir computing system with respect to variation of dynamic memristors; fabricated Bi2O2Se dynamic memristor array for reservoir computing applications; Bi2O2Se dynamic memristor-based reservoir computing system; training curves for Bi2O2Se dynamic memristor-based reservoir computing system; relative polarity of typical solvents; data set including RSs from modeled current decaying curves (case 1); data set including RSs from modeled current decaying curves (case 2); and extracted parameters regarding current decaying properties (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!

    This article has not yet been cited by other publications.

    ACS Nano

    Cite this: ACS Nano 2025, XXXX, XXX, XXX-XXX
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.4c13613
    Published January 30, 2025
    © 2025 American Chemical Society

    Article Views

    291

    Altmetric

    -

    Citations

    -
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.