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    Controllable Growth of Vertical Heterostructure GaTexSe1–x/Si by Molecular Beam Epitaxy
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    † State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
    ‡ National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
    § Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia
    *Address correspondence to (F. Xiu) [email protected], (W. Hu) [email protected]
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    ACS Nano

    Cite this: ACS Nano 2015, 9, 8, 8592–8598
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    https://doi.org/10.1021/acsnano.5b03796
    Published August 2, 2015
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    Abstract

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    Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1–x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p–n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1–x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research.

    Copyright © 2015 American Chemical Society

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.5b03796.

    • Extra structural characterizations of GaTexSe1–x and optoelectrical performance of GaTexSe1–x/Si photodiodes (PDF)

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    ACS Nano

    Cite this: ACS Nano 2015, 9, 8, 8592–8598
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.5b03796
    Published August 2, 2015
    Copyright © 2015 American Chemical Society
    Request reuse permissions

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