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Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors
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    Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors
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    Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People’s Republic of China
    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
    § Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People’s Republic of China
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    ACS Nano

    Cite this: ACS Nano 2016, 10, 1, 436–445
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    https://doi.org/10.1021/acsnano.5b05313
    Published December 17, 2015
    Copyright © 2015 American Chemical Society

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    Organic field-effect transistors (OFETs) featuring a photoactive hybrid bilayer dielectric (PHBD) that comprises a self-assembled monolayer (SAM) of photochromic diarylethenes (DAEs) and an ultrathin solution-processed hafnium oxide layer are described here. We photoengineer the energy levels of DAE SAMs to facilitate the charging and discharging of the interface of the two dielectrics, thus yielding an OFET that functions as a nonvolatile memory device. The transistors use light signals for programming and electrical signals for erasing (≤3 V) to produce a large, reversible threshold-voltage shift with long retention times and good nondestructive signal processing ability. The memory effect can be exercised by more than 104 memory cycles. Furthermore, these memory cells have demonstrated the capacity to be arrayed into a photosensor matrix on flexible plastic substrates to detect the spatial distribution of a confined light and then store the analog sensor input as a two-dimensional image with high precision over a long period of time.

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    This article is cited by 93 publications.

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    ACS Nano

    Cite this: ACS Nano 2016, 10, 1, 436–445
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    https://doi.org/10.1021/acsnano.5b05313
    Published December 17, 2015
    Copyright © 2015 American Chemical Society

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