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    Raman Signatures of Polytypism in Molybdenum Disulfide
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    † Department of Physics, Sogang University, Seoul 04107, Korea
    ‡ School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
    *E-mail: [email protected]
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    ACS Nano

    Cite this: ACS Nano 2016, 10, 2, 1948–1953
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    https://doi.org/10.1021/acsnano.5b05831
    Published January 12, 2016
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    Abstract

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    Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using three different excitation energies that are nonresonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype, whereas the high-frequency intralayer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed that enable determination of the stacking order.

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    • Crystal structures and space group of polytypes of 3TL-MoS2, HR-TEM images of 2H- and 3R-MoS2, optical microscope images of 3R and mixed-phase samples, comparison of the PL spectra, peak positions of Raman modes as a function of the number of TLs with different stacking sequences, and Raman spectra of various few-layer MoS2 samples with different stacking sequences (PDF)

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