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Quantum Electronic Transport of Topological Surface States in β-Ag2Se Nanowire

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Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
§ Department of Measurement and Analysis, National Nanofab Center, Daejeon 34141, Korea
Department of Physics and Photon Science, School of Physics and Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
Korea Research Institute of Standards and Science, Daejeon 34113, Korea
Cite this: ACS Nano 2016, 10, 4, 3936–3943
Publication Date (Web):March 28, 2016
Copyright © 2016 American Chemical Society

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    Abstract Image

    Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov–Bohm oscillations, and Shubnikov–de Haas oscillations. First-principles band calculations revealed that the band inversion in β-Ag2Se is caused by strong spin–orbit coupling and Ag–Se bonding hybridization. These investigations provide evidence of nontrivial surface state about β-Ag2Se TIs that have anisotropic Dirac cones.

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