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In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

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Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Nano 2017, 11, 2, 1683-1688
    Article

    In Situ Patterning of Ultrasharp Dopant Profiles in Silicon
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    † Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway
    ‡ Department of Physics, Aberystwyth University, SY23 3BZ Aberystwyth, United Kingdom
    § Fritz-Harber-Insitute Max-Planck Society, Faradayweg 4-6 14195 Berlin, Germany
    ∥ MAX IV Laboratory, Lund University, 221 00 Lund, Sweden
    ⊥ Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
    # Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark
    ∇ School of Physics and Astronomy (SUPA), University of St. Andrews, St. Andrews, Fife KY16 9SS, United Kingdom
    *E-mail: [email protected]
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    ACS Nano

    Cite this: ACS Nano 2017, 11, 2, 1683–1688
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    https://doi.org/10.1021/acsnano.6b07359
    Published February 9, 2017
    Copyright © 2017 American Chemical Society
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    Abstract

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    We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

    Copyright © 2017 American Chemical Society

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    Cited By

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    This article is cited by 7 publications.

    1. Håkon I. Røst, Ezequiel Tosi, Frode S. Strand, Anna Cecilie Åsland, Paolo Lacovig, Silvano Lizzit, Justin W. Wells. Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform. ACS Applied Materials & Interfaces 2023, 15 (18) , 22637-22643. https://doi.org/10.1021/acsami.2c23011
    2. Håkon I. Røst, Benjamen P. Reed, Frode S. Strand, Joseph A. Durk, D. Andrew Evans, Antonija Grubišić-Čabo, Gary Wan, Mattia Cattelan, Mauricio J. Prieto, Daniel M. Gottlob, Liviu C. Tănase, Lucas de Souza Caldas, Thomas Schmidt, Anton Tadich, Bruce C. C. Cowie, Rajesh Kumar Chellappan, Justin W. Wells, Simon P. Cooil. A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials & Interfaces 2021, 13 (31) , 37510-37516. https://doi.org/10.1021/acsami.1c09987
    3. Procopios Constantinou, Taylor J. Z. Stock, Li-Ting Tseng, Dimitrios Kazazis, Matthias Muntwiler, Carlos A. F. Vaz, Yasin Ekinci, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield. EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning. Nature Communications 2024, 15 (1) https://doi.org/10.1038/s41467-024-44790-6
    4. Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou, Taylor J. Z. Stock, Neil J. Curson, Steven R. Schofield, Matthias Muntwiler, Gabriel Aeppli, Yasin Ekinci. Resistless EUV lithography: Photon-induced oxide patterning on silicon. Science Advances 2023, 9 (16) https://doi.org/10.1126/sciadv.adf5997
    5. Yuanyi Zhang, Scott P. O. Danielsen, Bhooshan C. Popere, Andrew T. Heitsch, Mingqi Li, Peter Trefonas, Rachel A. Segalman, Reika Katsumata. Discrete, Shallow Doping of Semiconductors via Cylinder‐Forming Block Copolymer Self‐Assembly. Macromolecular Materials and Engineering 2022, 307 (9) https://doi.org/10.1002/mame.202200155
    6. Chao Lei, Allan H. MacDonald. Simple accurate model of silicon donor arrays. Physical Review B 2022, 106 (4) https://doi.org/10.1103/PhysRevB.106.045305
    7. Mingqi Li, Bhooshan Popere, Peter Trefonas, Andrew Heitsch, Ratchana Limary, Reika Katsumata, Yuanyi Zhang, Rachel A. Segalman, , . Ultra-thin conformal coating for spin-on doping applications. 2019, 26. https://doi.org/10.1117/12.2514830
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    ACS Nano

    Cite this: ACS Nano 2017, 11, 2, 1683–1688
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.6b07359
    Published February 9, 2017
    Copyright © 2017 American Chemical Society
    Request reuse permissions

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