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Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

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Institute for Microelectronics and Microsystems, National Research Council, 80131 Naples, Italy
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
§ Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Greece
Cite this: ACS Nano 2017, 11, 11, 10955–10963
Publication Date (Web):October 26, 2017
https://doi.org/10.1021/acsnano.7b04792
Copyright © 2017 American Chemical Society

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    Abstract

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    We report vertically illuminated, resonant cavity enhanced, graphene–Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene–Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene–Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

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