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Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2/MoS2/hBN

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    Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2/MoS2/hBN
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    • Mitsuhiro Okada
      Mitsuhiro Okada
      Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
      More by Mitsuhiro Okada
    • Alex Kutana
      Alex Kutana
      Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
      More by Alex Kutana
      Orcidhttp://orcid.org/0000-0001-6405-6466
    • Yusuke Kureishi
      Yusuke Kureishi
      Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
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    • Yu Kobayashi
      Yu Kobayashi
      Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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    • Yuika Saito
      Yuika Saito
      Department of Chemistry, Gakushuin University, Tokyo 171-0031, Japan
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    • Tetsuki Saito
      Tetsuki Saito
      Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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    • Kenji Watanabe
      Kenji Watanabe
      National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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    • Takashi Taniguchi
      Takashi Taniguchi
      National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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    • Sunny Gupta
      Sunny Gupta
      Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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    • Yasumitsu Miyata
      Yasumitsu Miyata
      Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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    • Boris I. Yakobson
      Boris I. Yakobson
      Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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    • Hisanori Shinohara*
      Hisanori Shinohara
      Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
      *E-mail: [email protected]
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      Orcidhttp://orcid.org/0000-0001-9400-7622
    • Ryo Kitaura*
      Ryo Kitaura
      Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
      *E-mail: [email protected]
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      Orcidhttp://orcid.org/0000-0001-8108-109X
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    ACS Nano

    Cite this: ACS Nano 2018, 12, 3, 2498–2505
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    https://doi.org/10.1021/acsnano.7b08253
    Published February 26, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    A van der Waals (vdW) heterostructure composed of multivalley systems can show excitonic optical responses from interlayer excitons that originate from several valleys in the electronic structure. In this work, we studied photoluminescence (PL) from a vdW heterostructure, WS2/MoS2, deposited on hexagonal boron nitride (hBN) flakes. PL spectra from the fabricated heterostructures observed at room temperature show PL peaks at 1.3–1.7 eV, which are absent in the PL spectra of WS2 or MoS2 monolayers alone. The low-energy PL peaks we observed can be decomposed into three distinct peaks. Through detailed PL measurements and theoretical analysis, including PL imaging, time-resolved PL measurements, and calculation of dielectric function ε(ω) by solving the Bethe–Salpeter equation with G0W0, we concluded that the three PL peaks originate from direct K–K interlayer excitons, indirect Q−Γ interlayer excitons, and indirect K−Γ interlayer excitons.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.7b08253.

    • Characterization of CVD-grown monolayer WS2 and MoS2, low-frequency Raman spectrum of hBN/WS2/MoS2/hBN, characterization of CVD-grown WS2/MoS2/hBN, statistics on the peak position of the low-energy PL peaks, PL spectra of hBN/WS2/MoS2/hBN with different stacking angle, details on the determination of the diffusion constant, excitation power dependence of the low-energy PL peaks, DFT calculation of transition energies of WS2/MoS2, another example of time-resolved PL intensity of hBN/WS2/MoS2/hBN, and a PL spectrum from intralayer excitons at low temperature (PDF)

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