Continuous Heteroepitaxy of Two-Dimensional Heterostructures Based on Layered Chalcogenides
- Yu KobayashiYu KobayashiDepartment of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, JapanMore by Yu Kobayashi,
- Shoji YoshidaShoji YoshidaFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Shoji Yoshida,
- Mina MaruyamaMina MaruyamaFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Mina Maruyama,
- Hiroyuki MogiHiroyuki MogiFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Hiroyuki Mogi,
- Kota MuraseKota MuraseFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Kota Murase,
- Yutaka ManiwaYutaka ManiwaDepartment of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, JapanMore by Yutaka Maniwa,
- Osamu TakeuchiOsamu TakeuchiFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Osamu Takeuchi,
- Susumu OkadaSusumu OkadaFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Susumu Okada,
- Hidemi ShigekawaHidemi ShigekawaFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanMore by Hidemi Shigekawa, and
- Yasumitsu Miyata*Yasumitsu Miyata*(Y. Miyata) E-mail: [email protected]Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, JapanMore by Yasumitsu Miyata
Abstract

The in-plane connection and layer-by-layer stacking of atomically thin layered materials are expected to allow the fabrication of two-dimensional (2D) heterostructures with exotic physical properties and future engineering applications. However, it is currently necessary to develop a continuous growth process that allows the assembly of a wide variety of atomic layers without interface degradation, contamination, and/or alloying. Herein, we report the continuous heteroepitaxial growth of 2D multiheterostructures and nanoribbons based on layered transition metal dichalcogenide (TMDC) monolayers, employing metal organic liquid precursors with high supply controllability. This versatile process can avoid air exposure during growth process and enables the formation of in-plane heterostructures with ultraclean atomically sharp and zigzag-edge straight junctions without defects or alloy formation around the interface. For the samples grown directly on graphite, we have investigated the local electronic density of states of atomically sharp heterointerface by scanning tunneling microscopy and spectroscopy, together with first-principles calculations. These results demonstrate an approach to realizing diverse nanostructures such as atomic layer-based quantum wires and superlattices and suggest advanced applications in the fields of electronics and optoelectronics.
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