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Continuous Heteroepitaxy of Two-Dimensional Heterostructures Based on Layered Chalcogenides

  • Yu Kobayashi
    Yu Kobayashi
    Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
    More by Yu Kobayashi
  • Shoji Yoshida
    Shoji Yoshida
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
  • Mina Maruyama
    Mina Maruyama
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
  • Hiroyuki Mogi
    Hiroyuki Mogi
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
  • Kota Murase
    Kota Murase
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
    More by Kota Murase
  • Yutaka Maniwa
    Yutaka Maniwa
    Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
  • Osamu Takeuchi
    Osamu Takeuchi
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
  • Susumu Okada
    Susumu Okada
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
    More by Susumu Okada
  • Hidemi Shigekawa
    Hidemi Shigekawa
    Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
  • , and 
  • Yasumitsu Miyata*
    Yasumitsu Miyata
    Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
    *(Y. Miyata) E-mail: [email protected]
Cite this: ACS Nano 2019, 13, 7, 7527–7535
Publication Date (Web):May 31, 2019
https://doi.org/10.1021/acsnano.8b07991
Copyright © 2019 American Chemical Society
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Abstract

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The in-plane connection and layer-by-layer stacking of atomically thin layered materials are expected to allow the fabrication of two-dimensional (2D) heterostructures with exotic physical properties and future engineering applications. However, it is currently necessary to develop a continuous growth process that allows the assembly of a wide variety of atomic layers without interface degradation, contamination, and/or alloying. Herein, we report the continuous heteroepitaxial growth of 2D multiheterostructures and nanoribbons based on layered transition metal dichalcogenide (TMDC) monolayers, employing metal organic liquid precursors with high supply controllability. This versatile process can avoid air exposure during growth process and enables the formation of in-plane heterostructures with ultraclean atomically sharp and zigzag-edge straight junctions without defects or alloy formation around the interface. For the samples grown directly on graphite, we have investigated the local electronic density of states of atomically sharp heterointerface by scanning tunneling microscopy and spectroscopy, together with first-principles calculations. These results demonstrate an approach to realizing diverse nanostructures such as atomic layer-based quantum wires and superlattices and suggest advanced applications in the fields of electronics and optoelectronics.

Supporting Information

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.8b07991.

  • Table of growth parameters for WS2, WSe2, MoS2, and MoSe2 monolayers in the present study (Table S1); optical microscopy images of WS2 grown on SiO2/Si via MOCVD with and without NaCl (Figure S1); optical microscopy images of MoSe2 grown with different supply rates for the metal and chalcogen precursors (Figure S2); optical image, PL intensity maps, and Raman spectra of MoS2/WS2, WSe2/WS2, MoS2/MoSe2, WSe2/MoSe2, WS2/MoSe2, and MoS2/WSe2 heterostructure (Figure S3); STM images of the MoS2/WS2 heterointerface from different regions (Figure S4); STM image and color scale map of the dI/dV spectra acquired in the vicinity of the heterointerface and averaged dI/dV spectra obtained from the MoS2/MoSe2 heterostructure (Figure S5); averaged dI/dV spectra, color scale map of the dI/dV spectra acquired in the vicinity of the heterointerface, calculated LDOS, and associated color scale map for the MoS2/WS2 heterostructure (Figure S6); STM image and dI/dV map of the area around the MoS2/WS2 heterointerface (Figure S7); PL spectra and peak position plot of MoS2 and WS2 at the WS2/MoS2 interfaces in different triangle-shaped grains and within the same grain (Figure S8); and unit cell of a superlattice consisting of WS2 and MoS2 strips used for theoretical calculations (Figure S9) (PDF)

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Cited By


This article is cited by 14 publications.

  1. Jingqi Feng, Huiying Gao, Tian Li, Xin Tan, Peng Xu, Menglei Li, Lin He, Donglin Ma. Lattice-Matched Metal–Semiconductor Heterointerface in Monolayer Cu2Te. ACS Nano 2021, Article ASAP.
  2. Maxim G. Kozodaev, Aleksandr S. Slavich, Roman I. Romanov, Sergey S. Zarubin, Andrey M. Markeev. Influence of Reducing Agent on Properties of Thin WS2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO3. The Journal of Physical Chemistry C 2020, 124 (51) , 28169-28177. https://doi.org/10.1021/acs.jpcc.0c09769
  3. Mehmet Aras, Çetin Kılıç, Salim Ciraci. Magnetic Heterostructures of Transition Metal Dichalcogenides: Antiparallel Magnetic Moments and Half-Metallic State. The Journal of Physical Chemistry C 2020, 124 (42) , 23352-23360. https://doi.org/10.1021/acs.jpcc.0c06917
  4. Christopher C. Price, Nathan C. Frey, Deep Jariwala, Vivek B. Shenoy. Engineering Zero-Dimensional Quantum Confinement in Transition-Metal Dichalcogenide Heterostructures. ACS Nano 2019, 13 (7) , 8303-8311. https://doi.org/10.1021/acsnano.9b03716
  5. Yu Wang, Ling Wang, Xin Zhang, Xuejing Liang, Yiyu Feng, Wei Feng. Two-dimensional nanomaterials with engineered bandgap: Synthesis, properties, applications. Nano Today 2021, 37 , 101059. https://doi.org/10.1016/j.nantod.2020.101059
  6. Yongfeng Pei, Rui Chen, Hang Xu, Dong He, Changzhong Jiang, Wenqing Li, Xiangheng Xiao. Recent progress about 2D metal dichalcogenides: Synthesis and application in photodetectors. Nano Research 2020, 9 https://doi.org/10.1007/s12274-020-3160-7
  7. Litty Thomas Manamel, Arka Mukherjee, Bikas C. Das. Two-dimensional nanohybrid of MoS2 and Rose Bengal: Facile solution growth and band structure probing. Applied Surface Science 2020, 530 , 147063. https://doi.org/10.1016/j.apsusc.2020.147063
  8. Zhaobo Zhou, Yehui Zhang, Xiwen Zhang, Xianghong Niu, Guangfen Wu, Jinlan Wang. Suppressing photoexcited electron–hole recombination in MoSe 2 /WSe 2 lateral heterostructures via interface-coupled state engineering: a time-domain ab initio study. Journal of Materials Chemistry A 2020, 8 (39) , 20621-20628. https://doi.org/10.1039/D0TA06626E
  9. Do Hee Lee, Yeoseon Sim, Jaewon Wang, Soon-Yong Kwon. Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities. APL Materials 2020, 8 (3) , 030901. https://doi.org/10.1063/1.5142601
  10. Chandra Shekar Sarap, Miftahussurur Hamidi Putra, Maria Fyta. Domain-size effect on the electronic properties of two-dimensional MoS 2 / WS 2 . Physical Review B 2020, 101 (7) https://doi.org/10.1103/PhysRevB.101.075129
  11. Rong Xiang, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yang Qian, Yuta Sato, Ming Liu, Daiming Tang, Devashish Gokhale, Jia Guo, Kaoru Hisama, Satoshi Yotsumoto, Tatsuro Ogamoto, Hayato Arai, Yu Kobayashi, Hao Zhang, Bo Hou, Anton Anisimov, Mina Maruyama, Yasumitsu Miyata, Susumu Okada, Shohei Chiashi, Yan Li, Jing Kong, Esko I. Kauppinen, Yuichi Ikuhara, Kazu Suenaga, Shigeo Maruyama. One-dimensional van der Waals heterostructures. Science 2020, 367 (6477) , 537-542. https://doi.org/10.1126/science.aaz2570
  12. Mitsuhiro Okada, Naoya Okada, Wen-Hsin Chang, Takahiko Endo, Atsushi Ando, Tetsuo Shimizu, Toshitaka Kubo, Yasumitsu Miyata, Toshifumi Irisawa. Gas-Source CVD Growth of Atomic Layered WS2 from WF6 and H2S Precursors with High Grain Size Uniformity. Scientific Reports 2019, 9 (1) https://doi.org/10.1038/s41598-019-54049-6
  13. Hong En Lim, Toshifumi Irisawa, Naoya Okada, Mitsuhiro Okada, Takahiko Endo, Yusuke Nakanishi, Yutaka Maniwa, Yasumitsu Miyata. Monolayer MoS 2 growth at the Au–SiO 2 interface. Nanoscale 2019, 11 (42) , 19700-19704. https://doi.org/10.1039/C9NR05119H
  14. Hisaki Sawahata, Susumu Okada, Mina Maruyama. Energetics and electronic structures of borders between MoS 2 and WS 2. Japanese Journal of Applied Physics 2019, 58 (9) , 095002. https://doi.org/10.7567/1347-4065/ab34f9

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