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2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
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    2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
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    • Zhicheng Su*
      Zhicheng Su
      Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
      *Email: [email protected]
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    • Naiyin Wang
      Naiyin Wang
      Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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    • Hark Hoe Tan
      Hark Hoe Tan
      Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
      Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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    • Chennupati Jagadish
      Chennupati Jagadish
      Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
      Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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    ACS Photonics

    Cite this: ACS Photonics 2021, 8, 6, 1735–1745
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    https://doi.org/10.1021/acsphotonics.1c00287
    Published June 8, 2021
    Copyright © 2021 American Chemical Society

    Abstract

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    The successful application of semiconductor nanostructures in devices has attracted intense interest in their carrier dynamics. Here an in-depth investigation of the carrier dynamics in novel layered InP nanomembranes with a large area of atomically sharp wurtzite-zincblende (WZ-ZB) interface is conducted for the first time by using various spectroscopic techniques. Two kinds of type II transitions in these nanomembranes are observed, which are from the ZB/WZ type II planar interface and stacking fault-induced ZB segments in the WZ phase layer. A strong two-dimensional carrier localization effect in the flat type II interface is demonstrated at low temperatures. As the excitation fluence increases, the occurrence of state filling can play an important role in the emission energy and lifetime of this type II transition. Thermal transfer of carriers from the type II interface 2D localization to the ZB conduction band results in the quenching of type II transitions at room temperature. Interesting novel emission polarization behaviors of different transitions in this InP nanomembrane are also highlighted. The polarization direction of the WZ and ZB emissions, as well as two kinds of type II transitions, are found to be perpendicular to each other. This study thus provides a deeper insight into the type II transitions in semiconductor nanostructures.

    Copyright © 2021 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c00287.

    • Additional data on PL spectra, Raman spectra, and comparison with WZ InP nanomembranes (PDF)

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    Cited By

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    This article is cited by 7 publications.

    1. Wei Wen Wong, Naiyin Wang, Bryan D. Esser, Stephen A. Church, Li Li, Mark Lockrey, Igor Aharonovich, Patrick Parkinson, Joanne Etheridge, Chennupati Jagadish, Hark Hoe Tan. Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers. ACS Nano 2023, 17 (15) , 15065-15076. https://doi.org/10.1021/acsnano.3c04234
    2. Zilan Wang, Zhigang Wang, Francis C. C. Ling, Zhicheng Su. Asymmetric Broadening and Enhanced Photoluminescence Emission in ZnO Due to Electron–Phonon Coupling. The Journal of Physical Chemistry C 2022, 126 (32) , 13814-13820. https://doi.org/10.1021/acs.jpcc.2c03696
    3. Nikita Gagrani, Kaushal Vora, Chennupati Jagadish, Hark Hoe Tan. Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes. ACS Applied Materials & Interfaces 2022, 14 (32) , 37101-37109. https://doi.org/10.1021/acsami.2c04890
    4. Miguel Sinusia Lozano, Víctor J. Gómez. Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires. Nanoscale Advances 2023, 5 (7) , 1890-1909. https://doi.org/10.1039/D2NA00956K
    5. Jiajun Yu, Yinan Zhao, Siqi Li, Jinshan Yao, Lu Yao, Jiqiang Ning, Yucheng Jiang, Hong Lu, Baile Chen, Changcheng Zheng. Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy. Journal of Luminescence 2022, 249 , 119009. https://doi.org/10.1016/j.jlumin.2022.119009
    6. S Kimura, H Gamo, Y Katsumi, J Motohisa, K Tomioka. InP nanowire light-emitting diodes with different pn-junction structures. Nanotechnology 2022, 33 (30) , 305204. https://doi.org/10.1088/1361-6528/ac659a
    7. Nikita Gagrani, Kaushal Vora, Sonachand Adhikari, Yuxin Jiang, Chennupati Jagadish, Hark Hoe Tan. n‐SnO x as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting Diodes. Advanced Optical Materials 2022, 10 (11) https://doi.org/10.1002/adom.202102690

    ACS Photonics

    Cite this: ACS Photonics 2021, 8, 6, 1735–1745
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsphotonics.1c00287
    Published June 8, 2021
    Copyright © 2021 American Chemical Society

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