Electrically Assisted Lasing in Metal Halide Perovskite SemiconductorsClick to copy article linkArticle link copied!
- Alex J. Grede*Alex J. Grede*E-mail: [email protected]Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United StatesNRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United StatesMore by Alex J. Grede
- Robert CawthornRobert CawthornDepartment of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United StatesDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United StatesMore by Robert Cawthorn
- Lianfeng ZhaoLianfeng ZhaoDepartment of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United StatesHolcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United StatesMore by Lianfeng Zhao
- John P. MurphyJohn P. MurphyDepartment of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United StatesNRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United StatesMore by John P. Murphy
- Kwangdong RohKwangdong RohDepartment of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United StatesDepartment of Physics, Ewha Womans University, Seoul 03760, Republic of KoreaMore by Kwangdong Roh
- Khaled Al KurdiKhaled Al KurdiSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United StatesMore by Khaled Al Kurdi
- Stephen BarlowStephen BarlowSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United StatesRenewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United StatesMore by Stephen Barlow
- Seth R. MarderSeth R. MarderSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United StatesRenewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United StatesDepartment of Chemistry and Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80309, United StatesMore by Seth R. Marder
- Barry P. RandBarry P. RandDepartment of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United StatesAndlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United StatesMore by Barry P. Rand
- Noel C. Giebink*Noel C. Giebink*E-mail: [email protected]Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United StatesDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United StatesMore by Noel C. Giebink
Abstract
Metal halide perovskite (MHP) semiconductors offer the prospect of wavelength-tunable diode lasers fabricated on a wide range of substrates without lattice matching concerns. However, to date, all MHP lasers are optically pumped. Here, we show that electrically injected carriers can assist lasing in a MHP composition of formamidinium lead iodide and methylammonium lead bromide ((FAPbI3)0.95(MAPbBr3)0.05) under short, high current electrical pulses at low temperature. Using a distributed feedback resonator, doped organic transport layers, and a custom impulse circuit that delivers electrical pulses as short as 3 ns, we are able to inject a carrier density of approximately 6 × 1017 cm–3 at T = 230 K and show that it leads to a ∼24% reduction in the optically pumped lasing threshold when the optical pulse overlaps the first few nanoseconds of the electrical pulse. These results support the viability of MHP laser diodes and indicate that roughly an order of magnitude reduction in threshold carrier density will be required to achieve pure electrically pumped lasing in (FAPbI3)0.95(MAPbBr3)0.05 at low temperature.
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