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Electrically Assisted Lasing in Metal Halide Perovskite Semiconductors
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    Electrically Assisted Lasing in Metal Halide Perovskite Semiconductors
    Click to copy article linkArticle link copied!

    • Alex J. Grede*
      Alex J. Grede
      Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
      NRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
      *E-mail: [email protected]
    • Robert Cawthorn
      Robert Cawthorn
      Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
      Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    • Lianfeng Zhao
      Lianfeng Zhao
      Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
      Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States
    • John P. Murphy
      John P. Murphy
      Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
      NRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
    • Kwangdong Roh
      Kwangdong Roh
      Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
      Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
    • Khaled Al Kurdi
      Khaled Al Kurdi
      School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United States
    • Stephen Barlow
      Stephen Barlow
      School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United States
      Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United States
    • Seth R. Marder
      Seth R. Marder
      School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30303, United States
      Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United States
      Department of Chemistry and Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80309, United States
    • Barry P. Rand
      Barry P. Rand
      Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
      Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
    • Noel C. Giebink*
      Noel C. Giebink
      Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
      Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
      *E-mail: [email protected]
    Other Access OptionsSupporting Information (1)

    ACS Photonics

    Cite this: ACS Photonics 2024, 11, 5, 1851–1856
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsphotonics.4c00642
    Published May 6, 2024
    Copyright © 2024 American Chemical Society

    Abstract

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    Metal halide perovskite (MHP) semiconductors offer the prospect of wavelength-tunable diode lasers fabricated on a wide range of substrates without lattice matching concerns. However, to date, all MHP lasers are optically pumped. Here, we show that electrically injected carriers can assist lasing in a MHP composition of formamidinium lead iodide and methylammonium lead bromide ((FAPbI3)0.95(MAPbBr3)0.05) under short, high current electrical pulses at low temperature. Using a distributed feedback resonator, doped organic transport layers, and a custom impulse circuit that delivers electrical pulses as short as 3 ns, we are able to inject a carrier density of approximately 6 × 1017 cm–3 at T = 230 K and show that it leads to a ∼24% reduction in the optically pumped lasing threshold when the optical pulse overlaps the first few nanoseconds of the electrical pulse. These results support the viability of MHP laser diodes and indicate that roughly an order of magnitude reduction in threshold carrier density will be required to achieve pure electrically pumped lasing in (FAPbI3)0.95(MAPbBr3)0.05 at low temperature.

    Copyright © 2024 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.4c00642.

    • Details of the electrical pulsing circuit, simulations of the DFB threshold optical gain, and LED copumping measurements using 3 ns pulses (PDF)

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    ACS Photonics

    Cite this: ACS Photonics 2024, 11, 5, 1851–1856
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsphotonics.4c00642
    Published May 6, 2024
    Copyright © 2024 American Chemical Society

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