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Transient GaAs Plasmonic Metasurfaces at Terahertz Frequencies

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    Transient GaAs Plasmonic Metasurfaces at Terahertz Frequencies
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    † Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
    ‡ Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
    § Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
    *E-mail: [email protected]
    *E-mail: [email protected]
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    ACS Photonics

    Cite this: ACS Photonics 2017, 4, 1, 15–21
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    https://doi.org/10.1021/acsphotonics.6b00735
    Published December 9, 2016
    Copyright © 2016 American Chemical Society
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    Abstract

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    We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

    Copyright © 2016 American Chemical Society

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    This article is cited by 38 publications.

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    ACS Photonics

    Cite this: ACS Photonics 2017, 4, 1, 15–21
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsphotonics.6b00735
    Published December 9, 2016
    Copyright © 2016 American Chemical Society
    Request reuse permissions

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