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CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics

  • Peng Xing
    Peng Xing
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    More by Peng Xing
  • Danhao Ma
    Danhao Ma
    Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
    More by Danhao Ma
  • Kelvin J. A. Ooi
    Kelvin J. A. Ooi
    School of Electrical and Computer Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor Darul Ehsan, Malaysia
  • Ju Won Choi
    Ju Won Choi
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    More by Ju Won Choi
  • Anuradha Murthy Agarwal
    Anuradha Murthy Agarwal
    Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
  • , and 
  • Dawn Tan*
    Dawn Tan
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    *E-mail: [email protected]
    More by Dawn Tan
Cite this: ACS Photonics 2019, 6, 5, 1162–1167
Publication Date (Web):March 5, 2019
Copyright © 2019 American Chemical Society

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    Abstract Image

    Silicon carbide (SiC) is considered a promising platform for linear and nonlinear photonics due to its large band gap, large refractive index, low thermo-optic coefficient, large Kerr nonlinearity, and good mechanical stability. We evaluate amorphous SiC (a-SiC) deposited on an insulator, using plasma-enhanced chemical vapor deposition, as a nonlinear optical material. Deposited films possess a band gap of 2.3 eV and refractive index of 2.45 at a wavelength of 1550 nm. Ring resonators with intrinsic quality factor as high as 1.6 × 105 are demonstrated. Waveguides with loss as low as 3 dB/cm enable low loss linear integrated photonics. The Kerr nonlinearity of a-SiC around 1550 nm is measured to be 4.8 × 10–14 cm2/W—1 order of magnitude higher than previous results measured for both crystalline and amorphous SiC. Nonlinear loss characterization shows that two-photon absorption is absent. The three-photon absorption coefficient is characterized to be ∼0.01 cm3/GW2. The strong Kerr nonlinearity makes a-SiC a great platform for CMOS-compatible nonlinear photonics.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsphotonics.8b01468.

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