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CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics

  • Peng Xing
    Peng Xing
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    More by Peng Xing
    Orcidhttp://orcid.org/0000-0001-6941-3944
  • , 
  • Danhao Ma
    Danhao Ma
    Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
    More by Danhao Ma
  • , 
  • Kelvin J. A. Ooi
    Kelvin J. A. Ooi
    School of Electrical and Computer Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor Darul Ehsan, Malaysia
    More by Kelvin J. A. Ooi
  • , 
  • Ju Won Choi
    Ju Won Choi
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    More by Ju Won Choi
  • , 
  • Anuradha Murthy Agarwal
    Anuradha Murthy Agarwal
    Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
    More by Anuradha Murthy Agarwal
  • , and 
  • Dawn Tan*
    Dawn Tan
    SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372
    *E-mail: [email protected]
    More by Dawn Tan
Cite this: ACS Photonics 2019, 6, 5, 1162–1167
Publication Date (Web):March 5, 2019
https://doi.org/10.1021/acsphotonics.8b01468
Copyright © 2019 American Chemical Society
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    Abstract

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    Silicon carbide (SiC) is considered a promising platform for linear and nonlinear photonics due to its large band gap, large refractive index, low thermo-optic coefficient, large Kerr nonlinearity, and good mechanical stability. We evaluate amorphous SiC (a-SiC) deposited on an insulator, using plasma-enhanced chemical vapor deposition, as a nonlinear optical material. Deposited films possess a band gap of 2.3 eV and refractive index of 2.45 at a wavelength of 1550 nm. Ring resonators with intrinsic quality factor as high as 1.6 × 105 are demonstrated. Waveguides with loss as low as 3 dB/cm enable low loss linear integrated photonics. The Kerr nonlinearity of a-SiC around 1550 nm is measured to be 4.8 × 10–14 cm2/W—1 order of magnitude higher than previous results measured for both crystalline and amorphous SiC. Nonlinear loss characterization shows that two-photon absorption is absent. The three-photon absorption coefficient is characterized to be ∼0.01 cm3/GW2. The strong Kerr nonlinearity makes a-SiC a great platform for CMOS-compatible nonlinear photonics.

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    • Additional ring resonators characterization results and waveguide nonlinear experiments results (PDF)

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