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Enhanced Spontaneous Emission Rates for Single Isoelectronic Luminescence Centers in Photonic Crystal Cavities

  • Ruoxi Wang*
    Ruoxi Wang
    University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
    *E-mail: [email protected]. Phone: +81 298534350.
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    Orcidhttp://orcid.org/0000-0002-0000-8358
    • , 
  • Michio Ikezawa
    Michio Ikezawa
    University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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    • , 
  • Yoshiki Sakuma
    Yoshiki Sakuma
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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    • , 
  • Hiroyuki Takeda
    Hiroyuki Takeda
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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    • , 
  • Naoki Ikeda
    Naoki Ikeda
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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    • , 
  • Yoshimasa Sugimoto
    Yoshimasa Sugimoto
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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    • , 
  • Kazuaki Sakoda
    Kazuaki Sakoda
    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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    • , 
  • Yuuta Yamada
    Yuuta Yamada
    University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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    • , and 
  • Yasuaki Masumoto
    Yasuaki Masumoto
    University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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Cite this: ACS Photonics 2020, 7, 2, 321–326
Publication Date (Web):January 13, 2020
https://doi.org/10.1021/acsphotonics.9b00616
Copyright © 2020 American Chemical Society
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Abstract

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Purcell effect enhancement of spontaneous emission rates is demonstrated for isoelectronic trap single-photon emitters. Two-dimensional photonic crystal slabs with L3 defects were fabricated in nitrogen delta-doped GaAs. Photoluminescence spectra of each photonic crystal cavity had a series of sharp and bright lines arising from individual nitrogen luminescence centers, which was confirmed by Hanbury-Brown and Twiss measurements. The emission rates of these lines depended on cavity detuning, indicating a resonant character of the enhancement. The observed emission lifetime in the cavity was 400 ps, which would be the shortest lifetime reported so far for luminescence centers in GaAs.

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  • Dependence of the decay rates on the absolute value of detuning for four PCCs; PL spectra and decay rates of emitters outside PCCs, measured before and after gas injection (PDF)

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