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Humidity-Tolerant Ultrathin NiO Gas-Sensing Films
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    Humidity-Tolerant Ultrathin NiO Gas-Sensing Films
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    • Rachel L. Wilson
      Rachel L. Wilson
      Christopher Ingold Laboratories, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
    • Cristian Eugen Simion
      Cristian Eugen Simion
      National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
    • Adelina Stanoiu
      Adelina Stanoiu
      National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
    • Alaric Taylor
      Alaric Taylor
      Department of Chemical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
    • Stefan Guldin
      Stefan Guldin
      Department of Chemical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
    • James A. Covington
      James A. Covington
      School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
    • Claire J. Carmalt
      Claire J. Carmalt
      Christopher Ingold Laboratories, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
    • Chris S. Blackman*
      Chris S. Blackman
      Christopher Ingold Laboratories, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
      *email: [email protected]
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    ACS Sensors

    Cite this: ACS Sens. 2020, 5, 5, 1389–1397
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    https://doi.org/10.1021/acssensors.0c00172
    Published April 14, 2020
    Copyright © 2020 American Chemical Society

    Abstract

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    When the gas sensor active layer film thickness is decreased, increased sensitivity to changes in the adsorbate concentration is expected when measuring the resistance of the layer, in particular when this thickness is on the order of the Debye length of the material (one–tens of nanometers); however, this is demonstrated only for a limited number of materials. Herein, ultrathin NiO films of different thicknesses (8–21 nm) have been deposited via chemical vapor deposition to fabricate gas sensor devices. Sensor performance for a range of NO2 concentrations (800 part-per-billion to 7 part-per-million) was evaluated and an optimum operating temperature of 125 °C determined. The dependence of the potential relative changes with respect to the NO2 concentration and of the sensor signal with respect to the geometrical parameters was qualitatively evaluated to derive a transduction model capable of fitting the experimental results. The selective sensitivity toward NO2 was confirmed by the limited response for different reducing gases, CO, CH4, NH3, and SO2, under optimum operating conditions, and the sensor signal toward NO2 increased with decreasing thickness, demonstrating that the concept of a Debye length dependence of sensitivity is applicable for the p-type semiconductor NiO. In addition, these NiO sensors were exposed to different relative levels of humidity over a wide range of operating temperatures and were found to display humidity tolerance far superior to those in previous reports on SnO2 materials.

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    • A comparison of sensor performance for sensors produced in this work with other NiO-based sensors described in literature; recovery time after exposure to NO2 was clearly very long for these sensors (on the order of hours), leading to subsequent gas exposures taking place before the sensors had fully recovered (PDF)

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    This article is cited by 55 publications.

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    ACS Sensors

    Cite this: ACS Sens. 2020, 5, 5, 1389–1397
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acssensors.0c00172
    Published April 14, 2020
    Copyright © 2020 American Chemical Society

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