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Self-Induced Gate Dielectric for Graphene Field-Effect Transistor

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Nanomaterials and System Lab, Department of Mechatronics Engineering, Jeju National University, Jeju 690-756, Republic of Korea
*E-mail: [email protected]. Tel: +82-64-754-3715. Fax: +82-64-756-3886.
Cite this: ACS Appl. Mater. Interfaces 2013, 5, 14, 6443–6446
Publication Date (Web):June 28, 2013
https://doi.org/10.1021/am401219x
Copyright © 2013 American Chemical Society

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    Abstract

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    We report the electronic characteristics of an avant-garde graphene-field-effect transistor (G-FETs) based on ZnO microwire as top-gate electrode with self-induced dielectric layer. Surface-adsorbed oxygen is wrapped up the ZnO microwire to provide high electrostatic gate-channel capacitance. This nonconventional device structure yields an on-current of 175 μA, on/off current ratio of 55, and a device mobility exceeding 1630 cm2/(V s) for holes and 1240 cm2/(V s) for electrons at room temperature. Self-induced gate dielectric process prevents G-FETs from impurity doping and defect formation in graphene lattice and facilitates the lithographic process. Performance degradation of G-FETs can be overcome by this avant-garde device structure.

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    The detailed synthesis process of ZnO microwire used for the fabrication of G-FET device is given along with a schematic diagram. This material is available free of charge via the Internet at http://pubs.acs.org/.

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    Cited By

    This article is cited by 8 publications.

    1. Kaliannan Thiyagarajan, Balasubramaniam Saravanakumar, and Sang-Jae Kim . Gate-Tunable Photoresponse of Defective Graphene: from Ultraviolet to Visible. ACS Applied Materials & Interfaces 2015, 7 (4) , 2171-2177. https://doi.org/10.1021/am507985m
    2. Tong Xu, Mingming Jiang, Peng Wan, Yang Liu, Caixia Kan, Daning Shi. High-performance self-powered ultraviolet photodetector in SnO2 microwire/p-GaN heterojunction using graphene as charge collection medium. Journal of Materials Science & Technology 2023, 138 , 183-192. https://doi.org/10.1016/j.jmst.2022.07.050
    3. Sang Kyung Lee, Yun Ji Kim, Sunwoo Heo, Woojin Park, Tae Jin Yoo, Chunhum Cho, Hyeon Jun Hwang, Byoung Hun Lee. Advantages of a buried-gate structure for graphene field-effect transistor. Semiconductor Science and Technology 2019, 34 (5) , 055010. https://doi.org/10.1088/1361-6641/ab0d54
    4. Yilin Sun, Mengxing Sun, Dan Xie. Graphene Electronic Devices. 2018, 103-155. https://doi.org/10.1016/B978-0-12-812651-6.00005-7
    5. Wenchao Tian, Wenbo Yu, Jing Shi, Yongkun Wang. The Property, Preparation and Application of Topological Insulators: A Review. Materials 2017, 10 (7) , 814. https://doi.org/10.3390/ma10070814
    6. Fei Hui, Pujashree Vajha, Yanfeng Ji, Chengbin Pan, Enric Grustan-Gutierrez, Huiling Duan, Peng He, Guqiao Ding, Yuanyuan Shi, Mario Lanza. Variability of graphene devices fabricated using graphene inks: Atomic force microscope tips. Surface and Coatings Technology 2017, 320 , 391-395. https://doi.org/10.1016/j.surfcoat.2016.12.020
    7. Junwei Yang, Wei Huang, Tingting Lin, Xiaoyong Pan, Haoyun Zhu, Yuli Huang, Weizhi Wang. Intramolecular oxidative cyclodehydrogenation route for the synthesis of strap-like conjugated polymers. RSC Advances 2017, 7 (18) , 10763-10773. https://doi.org/10.1039/C6RA25214A
    8. Balasubramaniam Saravanakumar, Kaliannan Thiyagarajan, Nagamalleswara Rao Alluri, Shin SoYoon, Kim Taehyun, Zong-Hong Lin, Sang-Jae Kim. Fabrication of an eco-friendly composite nanogenerator for self-powered photosensor applications. Carbon 2015, 84 , 56-65. https://doi.org/10.1016/j.carbon.2014.11.041

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