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Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si

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Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 TKK, Finland
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin 9, Ireland
School of Information and Communication Technology, KTH, Electrum 229, S-164 40 Kista, Sweden
Cite this: Crystal Growth & Design 2006, 6, 5, 1096–1100
Publication Date (Web):April 8, 2006
https://doi.org/10.1021/cg0503301
Copyright © 2006 American Chemical Society

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    Abstract

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    Defects in epitaxial laterally overgrown (ELO) InP layers are examined by high-resolution X-ray diffraction and synchrotron X-ray back-reflection and transmission topography. X-ray diffraction maps produce information about the overall crystal quality of the epitaxial layers in the InP ELO sample. The topographs show small angle boundaries, and the associated dislocations are located at the boundaries between the crystallites; allowing for their relative tilt, the maximum value for this is 0.06°. No defects inside the crystallites can be seen in the topographs, except for a small bending of 0.04° at most, of the ELO lattice planes. The section topographs show deformed X-ray interference fringes resulting from the large strain of the silicon lattice below the seeding areas.

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     To whom correspondence should be addressed. E-mail:  [email protected].

     Present address:  Nokia Oyj, P.O. Box 100, FI-00045 Nokia Group.

    Cited By

    This article is cited by 9 publications.

    1. M. Gutiérrez, D. F. Reyes, D. Araujo, J. P. Landesman, E. Pargon. Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching. Journal of Electronic Materials 2020, 49 (9) , 5226-5231. https://doi.org/10.1007/s11664-020-08312-6
    2. Yan-Ting Sun, Sebastian Lourdudoss. Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration. 2019, 163-200. https://doi.org/10.1016/bs.semsem.2019.07.004
    3. Evelyne Gil, Yamina André, Robert Cadoret, Agnès Trassoudaine. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues. 2015, 51-93. https://doi.org/10.1016/B978-0-444-63304-0.00002-0
    4. Himanshu Kataria, Wondwosen Metaferia, Carl Junesand, Chong Zhang, Nick Julian, John E. Bowers, Sebastian Lourdudoss. Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon. IEEE Journal of Selected Topics in Quantum Electronics 2014, 20 (4) , 380-386. https://doi.org/10.1109/JSTQE.2013.2294453
    5. , , , Himanshu Kataria, Wondwosen T. Metaferia, Carl Junesand, Chong Zhang, John E. Bowers, Sebastian Lourdudoss. High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography. 2014, 898904. https://doi.org/10.1117/12.2039794
    6. Zhechao Wang, Carl Junesand, Wondwosen Metaferia, Chen Hu, Lech Wosinski, Sebastian Lourdudoss. III–Vs on Si for photonic applications—A monolithic approach. Materials Science and Engineering: B 2012, 177 (17) , 1551-1557. https://doi.org/10.1016/j.mseb.2011.12.006
    7. C.S. Wong, N.S. Bennett, P.J. McNally, B. Galiana, P. Tejedor, M. Benedicto, J.M. Molina-Aldareguia, S. Monaghan, P.K. Hurley, K. Cherkaoui. Multi-technique characterisation of MOVPE-grown GaAs on Si. Microelectronic Engineering 2011, 88 (4) , 472-475. https://doi.org/10.1016/j.mee.2010.09.026
    8. A. Wierzbicka, J. Z. Domagala, Z. R. Zytkiewicz. Spatially resolved x-ray diffraction study of GaSb layers grown laterally on SiO2-masked GaAs substrates. Journal of Applied Physics 2009, 106 (4) https://doi.org/10.1063/1.3194319
    9. B. Heimbrodt, D. Lübbert, R. Köhler, T. Boeck, A.‐K. Gerlitzke, M. Hanke. Analysis of epitaxial laterally overgrown silicon structures by high resolution x‐ray rocking curve imaging. Crystal Research and Technology 2009, 44 (5) , 534-538. https://doi.org/10.1002/crat.200900115

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