ACS Publications. Most Trusted. Most Cited. Most Read
Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal

OR SEARCH CITATIONS

My Activity
Publications

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:Chem. Mater. 2014, 26, 18, 5274-5281
    Article

    Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal
    Click to copy article linkArticle link copied!

    View Author Information
    † Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstrasse 30, D-95447, Bayreuth, Germany
    ¥ Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
    ‡ Institute of Metal Physics, Russian Academy of Sciences, Urals Division, GSP-170, 18 S. Kovalevskaya Str., Yekaterinburg 620219, Russia
    § GFZ German Research Centre for Geosciences 3.3, Telegrafenberg, D-14473 Potsdam, Germany
    ∥ Swiss-Norwegian Beamlines at the European Synchrotron Radiation Facility, F-38043 Grenoble, France
    ⊥ Material Physics and Technology at Extreme Conditions, Laboratory of Crystallography, University of Bayreuth, D-95440 Bayreuth, Germany
    *E-mail: [email protected], [email protected]
    *E-mail: [email protected]
    Other Access OptionsSupporting Information (1)

    Chemistry of Materials

    Cite this: Chem. Mater. 2014, 26, 18, 5274–5281
    Click to copy citationCitation copied!
    https://doi.org/10.1021/cm502083v
    Published August 25, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    Silicon is a key technological material, and its controlled doping is one of the simple and effective ways which are applied for creation of new advanced materials with tunable optoelectronic properties. Boron was known to be a dopant that can dramatically change the properties of silicon. However, a limited solubility of boron atoms in silicon matrix strongly restricted creation of bulk diamond-type structured Si–B alloys with the high boron content exceeding 0.5–1 at. %. In this work we show that bulk Si1–xBx alloys with a rather high boron content (e.g., 2.4 at. %) may be fabricated by alloying of boron and silicon at high temperatures above the melting point of silicon and high pressure. We extensively investigated the electronic transport and optical properties of these alloys using several techniques, including electrical resistivity, Hall effect, magnetoresistance, Raman, IR and optical spectroscopy, and X-ray diffraction. We found that Si1–xBx solid solutions are metals that possess very unusual optical properties, e.g., they demonstrate the antiresonant Raman spectra and the loss of the reflectivity in the near-IR range. Our work indicates new perspectives in creation and applications of Si1–xBx solid solutions with the diamond-type structure.

    Copyright © 2014 American Chemical Society

    Subjects

    what are subjects

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    A summary of Si–B samples synthesized at HP-HT conditions. This material is available free of charge via the Internet at http://pubs.acs.org.

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!
    Citation Statements
    Explore this article's citation statements on scite.ai
    powered by  Scite

    This article is cited by 15 publications.

    1. Weiwei Li, Pei Wang, Chao Xu, Hu Tang, Peng Ren, Zhiqing Xie, Xuefeng Zhou, Jian Chen, Shanmin Wang, Songbai Han, Yusheng Zhao, Liping Wang. High-Pressure and High-Temperature Synthesis and In Situ High-Pressure Synchrotron X-ray Diffraction Study of HfSi2. Inorganic Chemistry 2021, 60 (20) , 15215-15222. https://doi.org/10.1021/acs.inorgchem.1c01681
    2. Minhyeong Lee, Hwa-Yeon Ryu, Eunjung Ko, Dae-Hong Ko. Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films. ACS Applied Electronic Materials 2019, 1 (3) , 288-301. https://doi.org/10.1021/acsaelm.8b00057
    3. Sergey V. Ovsyannikov, Elena Bykova, Anna Pakhomova, Denis P. Kozlenko, Maxim Bykov, Sergey E. Kichanov, Natalia V. Morozova, Igor V. Korobeinikov, Fabrice Wilhelm, Andrei Rogalev, Alexander A. Tsirlin, Alexander V. Kurnosov, Yury G. Zainulin, Nadezda I. Kadyrova, Alexander P. Tyutyunnik, and Leonid Dubrovinsky . Structural and Magnetic Transitions in CaCo3V4O12 Perovskite at Extreme Conditions. Inorganic Chemistry 2017, 56 (11) , 6251-6263. https://doi.org/10.1021/acs.inorgchem.7b00330
    4. Alexander E. Karkin, Vladimir I. Voronin, Natalia V. Morozova, Sergey V. Ovsyannikov, Ken-ichi Takarabe, Yoshihisa Mori, Shigeyuki Nakamura, and Vladimir V. Shchennikov . Unconventional Electronic Properties of Mg2Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping. The Journal of Physical Chemistry C 2016, 120 (18) , 9692-9701. https://doi.org/10.1021/acs.jpcc.6b02980
    5. B. K. Samantaray, G. Revathi, S. R. Bakshi, G. Bartarya, S. Gollapudi. Boron Deteriorates the Thermal Stability of Nanostructured Silicon. Silicon 2023, 15 (5) , 2055-2065. https://doi.org/10.1007/s12633-022-02125-4
    6. Elena Bykova, Sergey V. Ovsyannikov, Maxim Bykov, Yuqing Yin, Timofey Fedotenko, Hendrik Holz, Stefan Gabel, Benoit Merle, Stella Chariton, Vitali B. Prakapenka, Natalia Dubrovinskaia, Alexander F. Goncharov, Leonid Dubrovinsky. Synthesis, crystal structure, and properties of stoichiometric hard tungsten tetraboride, WB 4. Journal of Materials Chemistry A 2022, 10 (37) , 20111-20120. https://doi.org/10.1039/D2TA02268K
    7. Xiaolan Yan, Pei Li, Su-Huai Wei, Bing Huang. Universal Theory and Basic Rules of Strain-Dependent Doping Behaviors in Semiconductors. Chinese Physics Letters 2021, 38 (8) , 087103. https://doi.org/10.1088/0256-307X/38/8/087103
    8. Natalia V. Morozova, Igor V. Korobeinikov, Nikolay V. Abrosimov, Sergey V. Ovsyannikov. Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure. CrystEngComm 2020, 22 (33) , 5416-5435. https://doi.org/10.1039/D0CE00672F
    9. H.-Y. Ryu, M. Lee, H. Park, D.-H. Ko. Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration. Applied Surface Science 2020, 504 , 144447. https://doi.org/10.1016/j.apsusc.2019.144447
    10. Parham Rohani, Soham Banerjee, Soroosh Sharifi‐Asl, Mohammad Malekzadeh, Reza Shahbazian‐Yassar, Simon J. L. Billinge, Mark T. Swihart. Synthesis and Properties of Plasmonic Boron‐Hyperdoped Silicon Nanoparticles. Advanced Functional Materials 2019, 29 (8) https://doi.org/10.1002/adfm.201807788
    11. Sergey V. Ovsyannikov, Maxim Bykov, Elena Bykova, Konstantin Glazyrin, Rudra Sekhar Manna, Alexander A. Tsirlin, Valerio Cerantola, Ilya Kupenko, Alexander V. Kurnosov, Innokenty Kantor, Anna S. Pakhomova, Irina Chuvashova, Aleksandr I. Chumakov, Rudolf Rüffer, Catherine McCammon, Leonid S. Dubrovinsky. Pressure tuning of charge ordering in iron oxide. Nature Communications 2018, 9 (1) https://doi.org/10.1038/s41467-018-06457-x
    12. Jingjing Wang, Guoliang Sun, Panlong Kong, Weiguo Sun, Cheng Lu, Feng Peng, Xiaoyu Kuang. Novel structural phases and the electrical properties of Si 3 B under high pressure. Physical Chemistry Chemical Physics 2017, 19 (24) , 16206-16212. https://doi.org/10.1039/C7CP02450A
    13. Natalia V Morozova, Alexander E Karkin, Sergey V Ovsyannikov, Yuliya A Umerova, Vladimir V Shchennikov, R Mittal, A Thamizhavel. Electronic transport properties of M Fe 2 As 2 ( M = Ca, Eu, Sr) at ambient and high pressures up to 20 GPa. Superconductor Science and Technology 2015, 28 (12) , 125010. https://doi.org/10.1088/0953-2048/28/12/125010
    14. Sergey V. Ovsyannikov, Elena Bykova, Maxim Bykov, Michelle D. Wenz, Anna S. Pakhomova, Konstantin Glazyrin, Hanns-Peter Liermann, Leonid Dubrovinsky. Structural and vibrational properties of single crystals of Scandia, Sc2O3 under high pressure. Journal of Applied Physics 2015, 118 (16) https://doi.org/10.1063/1.4933391
    15. Sergey V. Ovsyannikov, Huiyang Gou, Alexander E. Karkin, Vladimir V. Shchennikov, Richard Wirth, Vladimir Dmitriev, Yoichi Nakajima, Natalia Dubrovinskaia, Leonid S. Dubrovinsky. ChemInform Abstract: Bulk Silicon Crystals with the High Boron Content, Si 1—x B x : Two Semiconductors Form an Unusual Metal.. ChemInform 2014, 45 (46) https://doi.org/10.1002/chin.201446006
    Download PDF
    Go to Chemistry of Materials
    Get e-Alerts
    Get e-Alerts

    Chemistry of Materials

    Cite this: Chem. Mater. 2014, 26, 18, 5274–5281
    Click to copy citationCitation copied!
    https://doi.org/10.1021/cm502083v
    Published August 25, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

    Article Views

    1582

    Altmetric

    -

    Citations

    15
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.