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2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, A New Organic Semiconductor for Air-Stable Organic Field-Effect Transistors with Mobilities up to 2.0 cm2 V-1 s-1

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    2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, A New Organic Semiconductor for Air-Stable Organic Field-Effect Transistors with Mobilities up to 2.0 cm2 V-1 s-1
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    Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan, and Department of Applied Chemistry, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
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    Cite this: J. Am. Chem. Soc. 2006, 128, 39, 12604–12605
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    https://doi.org/10.1021/ja064052l
    Published September 8, 2006
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    Abstract

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    Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of ∼2.0 cm2 V-1 s-1 and Ion/Ioff of 107.

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     Graduate School of Engineering, Hiroshima University.

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     Institute for Advanced Materials Research, Hiroshima University.

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     Tokai University.

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    Experimental details for the synthesis and characterization of DPh-BTBT, device fabrication, XRDs, DFT calculations, AFM images of DPh-BTBT thin films, and FET characteristics of DPh-BSBS-based OFETs fabricated on silanized substrates. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cite this: J. Am. Chem. Soc. 2006, 128, 39, 12604–12605
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