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Surface Transfer p-Type Doping of Epitaxial Graphene

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Contribution from the Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Cite this: J. Am. Chem. Soc. 2007, 129, 34, 10418–10422
Publication Date (Web):August 1, 2007
Copyright © 2007 American Chemical Society

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    Abstract Image

    Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.


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