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Surface Transfer p-Type Doping of Epitaxial Graphene
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    Surface Transfer p-Type Doping of Epitaxial Graphene
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    Contribution from the Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
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    Journal of the American Chemical Society

    Cite this: J. Am. Chem. Soc. 2007, 129, 34, 10418–10422
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    https://doi.org/10.1021/ja071658g
    Published August 1, 2007
    Copyright © 2007 American Chemical Society

    Abstract

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    Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.

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    Method used to determine the thickness of the ultrathin epitaxial graphene layer used in our experiment. This material is available free of charge via the Internet at http://pubs.acs.org.

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