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    Low-Temperature, Bottom-Up Synthesis of Graphene via a Radical-Coupling Reaction
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    † Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
    ‡ § ‡Department of Chemistry and §Department of Physics, National University of Singapore, 3 Science Drive 3, 117543, Singapore
    [email protected]; [email protected]
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    Journal of the American Chemical Society

    Cite this: J. Am. Chem. Soc. 2013, 135, 24, 9050–9054
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    https://doi.org/10.1021/ja4031825
    Published May 23, 2013
    Copyright © 2013 American Chemical Society
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    Abstract

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    In this article, we demonstrated a method to synthesize graphene films at low temperature via a mild radical-coupling reaction. During the deposition process, with the effectively breaking of the C–Br bonds of hexabromobenzene (HBB) precursors, the generated HBB radicals couple efficiently to form graphene films at the low temperature of 220–250 °C. In situ low-temperature scanning tunneling microscopy was used to provide atomic scale investigation of the graphene growth mechanism using HBB as precursor. The chemical structure evolution during the graphene growth process was further corroborated by in situ X-ray photoelectron spectroscopy measurements. The charge carrier mobility of the graphene film grown at low temperature is at 1000–4200 cm2 V–1 s–1, as evaluated in a field-effect transistor device configuration on SiO2 substrates, indicating the high quality of the films.

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    This article is cited by 64 publications.

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    Cite this: J. Am. Chem. Soc. 2013, 135, 24, 9050–9054
    Click to copy citationCitation copied!
    https://doi.org/10.1021/ja4031825
    Published May 23, 2013
    Copyright © 2013 American Chemical Society
    Request reuse permissions

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