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Enhancing the Hole-Conductivity of Spiro-OMeTAD without Oxygen or Lithium Salts by Using Spiro(TFSI)2 in Perovskite and Dye-Sensitized Solar Cells

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    Enhancing the Hole-Conductivity of Spiro-OMeTAD without Oxygen or Lithium Salts by Using Spiro(TFSI)2 in Perovskite and Dye-Sensitized Solar Cells
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    † §Department of Chemistry and †Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
    *E-mail: [email protected]
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    Journal of the American Chemical Society

    Cite this: J. Am. Chem. Soc. 2014, 136, 31, 10996–11001
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    https://doi.org/10.1021/ja504539w
    Published July 22, 2014
    Copyright © 2014 American Chemical Society
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    Abstract

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    2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD), the prevalent organic hole transport material used in solid-state dye-sensitized solar cells and perovskite-absorber solar cells, relies on an uncontrolled oxidative process to reach appreciable conductivity. This work presents the use of a dicationic salt of spiro-OMeTAD, named spiro(TFSI)2, as a facile means of controllably increasing the conductivity of spiro-OMeTAD up to 10–3 S cm–1 without relying on oxidation in air. Spiro(TFSI)2 enables the first demonstration of solid-state dye-sensitized solar cells fabricated and operated with the complete exclusion of oxygen after deposition of the sensitizer with higher and more reproducible device performance. Perovskite-absorber solar cells fabricated with spiro(TFSI)2 show improved operating stability in an inert atmosphere. Gaining control of the conductivity of the HTM in both dye-sensitized and perovskite-absorber solar cells in an inert atmosphere using spiro(TFSI)2 is an important step toward the commercialization of these technologies.

    Copyright © 2014 American Chemical Society

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    Additional figures, data, and detailed synthetic preparation and characterization procedures of spiro(TFSI)2. This material is available free of charge via the Internet at http://pubs.acs.org.

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