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Atomic Scale Oxidation of Silicon Nanoclusters on Silicon Carbide Surfaces

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Download Hi-Res ImageDownload to MS-PowerPointCite This:J. Phys. Chem. B 2003, 107, 42, 11597-11603
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    Atomic Scale Oxidation of Silicon Nanoclusters on Silicon Carbide Surfaces
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    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore
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    The Journal of Physical Chemistry B

    Cite this: J. Phys. Chem. B 2003, 107, 42, 11597–11603
    Click to copy citationCitation copied!
    https://doi.org/10.1021/jp035029e
    Published September 25, 2003
    Copyright © 2003 American Chemical Society
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    Abstract

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    The initial stage adsorption of molecular oxygen on the 6H−SiC(0001)-3×3 surface has been studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy. STM filled-state imaging reveals the sequential appearances of dark sites upon initial oxygen exposure at room temperature, followed by the appearances of bright sites at higher oxygen exposures. The changes in the STM images are interpreted on the basis of changes in the local density-of-states of the silicon adatom cluster site following the sequential development of different oxygen chemisorption states, beginning with the attachment of oxygen on the dangling bond site to its subsequent insertion in the Si−Si back-bond. Periodic density functional theory calculations supported our interpretations because the most stable chemisorption site was found to occur on the reactive adatom cluster site, as opposed to the adlayer coplanar bonds. The interaction of atomic O beam with the 3 × 3 surface results in the formation of silicon oxide nanoclusters.

    Copyright © 2003 American Chemical Society

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    †

     Department of Chemistry, National University of Singapore.

    ‡

     Department of Physics, National University of Singapore.

    *

     To whom correspondence should be addressed:  Prof. Kian Ping Loh, email:  [email protected]; FAX:  (65) 67791691.

    Cited By

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    This article is cited by 19 publications.

    1. Jia Mei Soon, Ngai Ling Ma, Kian Ping Loh and Osami Sakata. Kinetics of the Initial Oxidation of the (0001) 6H−SiC 3 × 3 Reconstructed Surface. The Journal of Physical Chemistry C 2008, 112 (43) , 16864-16868. https://doi.org/10.1021/jp802306e
    2. Wei Chen,, Shi Chen,, Dong Chen Qi,, Xing Yu Gao, and, Andrew Thye Shen Wee. Surface Transfer p-Type Doping of Epitaxial Graphene. Journal of the American Chemical Society 2007, 129 (34) , 10418-10422. https://doi.org/10.1021/ja071658g
    3. Wei Chen,, Hong Liang Zhang,, Hai Xu,, Eng Soon Tok,, Kian Ping Loh, and, Andrew Thye Shen Wee. C60 on SiC Nanomesh. The Journal of Physical Chemistry B 2006, 110 (43) , 21873-21881. https://doi.org/10.1021/jp0642241
    4. Wei Chen,, Kian Ping Loh,, Hai Xu, and, Andrew Thye Shen Wee. Nanoparticle Dispersion on Reconstructed Carbon Nanomeshes. Langmuir 2004, 20 (25) , 10779-10784. https://doi.org/10.1021/la048530m
    5. Rui Zhang, Fenghua Chen, Jinbin Wang, Dejun Fu. Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2018, 418 , 27-33. https://doi.org/10.1016/j.nimb.2017.12.027
    6. Xu Wang, Yanwen Zhang, Meixiong Tang, Dong Han, Engang Fu, Jianming Xue, Ziqiang Zhao. Synthesis of ultra-thin carbon layers on SiC substrate by ion implantation. Carbon 2015, 93 , 230-241. https://doi.org/10.1016/j.carbon.2015.05.046
    7. F. Spillebout, L. Stauffer, Ph. Sonnet, A.J. Mayne. Stability of small chemical groups on hexagonal-SiC(0001) surfaces: A theoretical study. Surface Science 2012, 606 (15-16) , 1195-1202. https://doi.org/10.1016/j.susc.2012.03.022
    8. Dan Zhang, Ping Shen, Laixin Shi, Qiaoli Lin, Qichuan Jiang. Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates. Applied Surface Science 2010, 256 (23) , 7043-7047. https://doi.org/10.1016/j.apsusc.2010.05.022
    9. Wolfgang Voegeli, Tomohiro Aoyama, Koichi Akimoto, Ayahiko Ichimiya, Yoshiyuki Hisada, Yoshihito Mitsuoka, Shinichi Mukainakano. Structure of the SiC(0001)-×-R30° surface after initial oxidation. Surface Science 2010, 604 (19-20) , 1713-1717. https://doi.org/10.1016/j.susc.2010.06.020
    10. J.H. Park, W.C. Mitchel, H.E. Smith, L. Grazulis, K.G. Eyink. Studies of interfacial layers between 4H-SiC (0001) and graphene. Carbon 2010, 48 (5) , 1670-1673. https://doi.org/10.1016/j.carbon.2009.12.006
    11. Wei Chen, Dongchen Qi, Xingyu Gao, Andrew Thye Shen Wee. Surface transfer doping of semiconductors. Progress in Surface Science 2009, 84 (9-10) , 279-321. https://doi.org/10.1016/j.progsurf.2009.06.002
    12. Y. Hoshino, T. Okawa, M. Shibuya, T. Nishimura, Y. Kido. Structures of clean and oxygen-adsorbed SiC(0001)-(3×3) surfaces. Surface Science 2008, 602 (21) , 3253-3257. https://doi.org/10.1016/j.susc.2008.08.020
    13. T.L. Goodrich, Z. Cai, K.S. Ziemer. Stability of MgO(111) films grown on 6H-SiC(0001) by molecular beam epitaxy for two-step integration of functional oxides. Applied Surface Science 2008, 254 (10) , 3191-3199. https://doi.org/10.1016/j.apsusc.2007.10.077
    14. Fabrice Amy. Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces. Journal of Physics D: Applied Physics 2007, 40 (20) , 6201-6214. https://doi.org/10.1088/0022-3727/40/20/S06
    15. Wei Chen, Shi Chen, Hong Liang Zhang, Hai Xu, Dong Chen Qi, Xing Yu Gao, Kian Ping Loh, Andrew Thye Shen Wee. Probing the interaction at the C60–SiC nanomesh interface. Surface Science 2007, 601 (14) , 2994-3002. https://doi.org/10.1016/j.susc.2007.05.009
    16. Wolfgang Voegeli, Koichi Akimoto, Tomoaki Urata, Shinichiro Nakatani, Kazushi Sumitani, Toshio Takahashi, Yoshiyuki Hisada, Yoshihito Mitsuoka, Shinichi Mukainakano, Hiroshi Sugiyama, Xiao-Wei Zhang, Hiroshi Kawata. Structure of the oxidized 4H–SiC(0 0 0 1)-3 × 3 surface. Surface Science 2007, 601 (4) , 1048-1053. https://doi.org/10.1016/j.susc.2006.11.048
    17. Wei Chen, Hai Xu, Kian Ping Loh, Andrew Thye Shen Wee. Structure of Co deposited 6H–SiC(0001). Surface Science 2005, 595 (1-3) , 107-114. https://doi.org/10.1016/j.susc.2005.08.005
    18. Wei Chen, Hai Xu, Lei Liu, Xingyu Gao, Dongchen Qi, Guowen Peng, Swee Ching Tan, Yuanping Feng, Kian Ping Loh, Andrew Thye Shen Wee. Atomic structure of the 6H–SiC(0001) nanomesh. Surface Science 2005, 596 (1-3) , 176-186. https://doi.org/10.1016/j.susc.2005.09.013
    19. Wei Chen, Kian Ping Loh, Hai Xu, A.T.S. Wee. Growth of Co Nanoclusters on SiC Honeycomb Templates. MRS Proceedings 2004, 818 https://doi.org/10.1557/PROC-818-M5.5.1
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    The Journal of Physical Chemistry B

    Cite this: J. Phys. Chem. B 2003, 107, 42, 11597–11603
    Click to copy citationCitation copied!
    https://doi.org/10.1021/jp035029e
    Published September 25, 2003
    Copyright © 2003 American Chemical Society
    Request reuse permissions

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