Oxygen-Induced Transformations of an FeO(111) Film on Pt(111): A Combined DFT and STM StudyClick to copy article linkArticle link copied!
- L. Giordano
- M. Lewandowski
- I. M. N. Groot
- Y.-N. Sun
- J. Goniakowski
- C. Noguera
- S. Shaikhutdinov
- G. Pacchioni
- H.-J. Freund
Abstract
The structural stability of an FeO(111) film supported on Pt(111) was studied by density functional theory (DFT) as a function of oxygen pressure. The results showed formation of O-rich phases at elevated O2 pressures and revealed a site specificity of the oxidation process within the coincidence (Moiré) structure between FeO(111) and Pt(111), ultimately resulting in an ordered pattern of O−Fe−O trilayer islands, as observed by scanning tunneling microscopy (STM). In addition, high resolution STM images revealed a (√3 × √3)R30° superstructure of the FeO2 islands with respect to pristine FeO(111). This structure is rationalized by DFT in terms of strong relaxations within the Fe sublayer and can be considered as an intermediate state of the FeO(111) transformation into an Fe2O3(0001) film.
1 Introduction
2 Methods and Materials
3 Results and Discussion
3.1 Experimental Results
3.2 Ab Initio Oxidation Thermodynamics of the FeO/Pt(111) Film
3.3 Ab Initio Characterization of the FeO2/Pt(111) Film
4 Conclusions
Acknowledgment
We acknowledge support from the COST Action D41 Inorganic oxides: surfaces and interfaces. L.G. and G.P. acknowledge the support of the Barcelona Supercomputing Center for a generous CPU grant. The FHI team acknowledges support from DFG through the Cluster of Excellence UNICAT, coordinated by TU Berlin, and the Fonds der Chemischen Industrie.
References
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- 1Chambers, S. A.; Droubay, T. C.; Wang, C. M.; Rosso, K. N.; Heald, S. M.; Schwartz, D. A.; Kittilstveld, K. R.; Gamelin, D. R. Mater. Today 2006, 9, 281https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28Xht1KmurfO&md5=7d9d473ea20c923094f41e4aa89aed3dFerromagnetism in oxide semiconductorsChambers, S. A.; Droubay, T. C.; Wang, C. M.; Rosso, K. M.; Heald, S. M.; Schwartz, D. A.; Kittilstved, K. R.; Gamelin, D. R.Materials Today (Oxford, United Kingdom) (2006), 9 (11), 28-35CODEN: MTOUAN; ISSN:1369-7021. (Elsevier Ltd.)A review. Over the past five years, considerable work has been carried out in the exploration of candidate dild. oxide magnetic semiconductors with high Curie temps. Fueled by early exptl. results and theor. predictions, claims of ferromagnetism at and above room temp. in doped oxides have abounded. In general, neither the true nature of these materials nor the phys. causes of the magnetism have been adequately detd. It is now apparent that these dil. magnetic systems are deceptively complex. We consider two well-characterized n-type magnetically doped oxide semiconductors and explore the relationship between donor electrons and ferromagnetism.
- 2Parkin, S. S. P.; Kaiser, C.; Panchula, A.; Rice, P. M.; Hughes, B.; Samant, M.; Yang, S.-H. Nat. Mater. 2004, 3, 8622https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXhtVehtrjJ&md5=3eaba74217d51545ba3414992c0b1358Giant tunneling magnetoresistance at room temperature with MgO (100) tunnel barriersParkin, Stuart S. P.; Kaiser, Christian; Panchula, Alex; Rice, Philip M.; Hughes, Brian; Samant, Mahesh; Yang, See-HunNature Materials (2004), 3 (12), 862-867CODEN: NMAACR; ISSN:1476-1122. (Nature Publishing Group)Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM). The performance of these devices is currently limited by the modest (<∼70%) room-temp. tunnelling magnetoresistance (TMR) of technol. relevant MTJs. Much higher TMR values have been theor. predicted for perfectly ordered (100) oriented single-cryst. Fe/MgO/Fe MTJs. Here, the authors show that sputter-deposited polycryst. MTJs grown on an amorphous underlayer, but with highly oriented (100) MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temp. and ∼300% at low temps. Consistent with these high TMR values, superconducting tunnelling spectroscopy expts. indicate that the tunnelling current has a very high spin polarization of ∼85%, which rivals that previously obsd. only using half-metallic ferromagnets. Such high values of spin polarization and TMR in readily manufacturable and highly thermally stable devices (up to 400°) will accelerate the development of new families of spintronic devices.
- 3Motoyama, Y.; Matsuzaki, H.; Murakami, H. IEEE Trans. Electron Devices 2001, 48, 15683https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3MXmtFeru70%253D&md5=00fb944e1e1679f28d41ddddd2eeab3eA study of the secondary electron yield γ of insulator cathodes for plasma display panelsMotoyama, Yasushi; Matsuzaki, Hideomi; Murakami, HiroshiIEEE Transactions on Electron Devices (2001), 48 (8), 1568-1574CODEN: IETDAI; ISSN:0018-9383. (Institute of Electrical and Electronics Engineers)In order to provide a guideline in the search for the optimum cathode materials for plasma display panels (PDPs), formulas for the simple calcn. of the secondary electron yield γ were derived from Hagstrum's theory for an insulator without impurity levels. From these, we obtained the generalized relations between γ and the band parameters of an insulator and the potential energy of an incident particle, which is an ion or a metastable atom. Unlike metals, it is not work function but the sum of band gap and electron affinity that essentially contributes to γ of an insulator. By applying these formulas, the γ values of BaO and MgO for He, Ne, Ar, Kr, and Xe ions and metastable atoms were practically calcd. In particular, the metastable atom-induced γ values of these insulators were calcd. for the first time. The γ values of these insulators for these noble gas ions are detd. by Auger neutralization only. As for MgO, which is at present the most useful insulator cathode for PDPs, the γ values for Kr and Xe ions become zero. These calcd. γ values of MgO for all noble gas ions were compared with exptl. results reported previously.
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- 7Nilius, N. Surf. Sci. Rep. 2009, 64, 5957https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXhtlWhu7nE&md5=52839e41ca659af45a367a48ac4f6b1eProperties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopyNilius, NiklasSurface Science Reports (2009), 64 (12), 595-659CODEN: SSREDI; ISSN:0167-5729. (Elsevier B.V.)A review. The prepn. of thin oxide films on metal supports is a versatile approach to explore the properties of oxide materials that are otherwise inaccessible to most surface science techniques due to their insulating nature. Although substantial progress was made in the characterization of oxide surfaces with spatially averaging techniques, a local view is often essential to provide comprehensive understanding of such systems. STM is a powerful tool to obtain at.-scale information on the growth behavior of oxide films, the resulting surface morphol. and defect structure. Furthermore, the binding configuration and spatial distribution of adsorbates on the oxide surface, as well as their electronic and optical properties can be probed with the STM and embedded spectroscopic techniques. This article surveys state-of-the-art STM expts. aiming for an investigation of surface properties of oxide materials as well as their interaction with individual adatoms, mols., and metal particles. It provides an introduction into the nucleation and growth of oxide layers on single-cryst. metal substrates, putting special emphasis on the various relaxation mechanisms of the oxide lattice to release the misfit strain with the support. Addnl., the peculiarities of polar oxide films are discussed. In the second part, the different interaction schemes between oxide surfaces and adsorbates are presented from the theor. point of view as well as on the basis of the key expt. performed with the STM. The focus lies hereby on charge-mediated binding schemes, leading to the formation of cationic or anionic species on the oxide surface. Furthermore, the role of point and line defects in the oxide adsorption behavior is inferred. The potential of thin oxide films as systems with tunable phys. and chem. properties is highlighted at the end of this review.
- 8Goniakowski, J.; Giordano, L.; Noguera, C. Phys. Rev. B 2010, 81, 205404There is no corresponding record for this reference.
- 9Giordano, L.; Cinquini, F.; Pacchioni, G. Phys. Rev. B 2006, 730454149https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XhsVSnsr4%253D&md5=34a31855e591ff73f17f9decae961a5aTuning the surface metal work function by deposition of ultrathin oxide films. Density functional calculationsGiordano, Livia; Cinquini, Fabrizio; Pacchioni, GianfrancoPhysical Review B: Condensed Matter and Materials Physics (2006), 73 (4), 045414/1-045414/6CODEN: PRBMDO; ISSN:1098-0121. (American Physical Society)Changes in the work function Φ of metal surfaces upon deposition of ultrathin oxide films were studied by band structure d. functional theory calcns. Four systems were considered: MgO/Ag(100), MgO/Mo(100), TiO2/Mo(100), and SiO2/Mo(112). MgO films induce a decrease of Φ of 1 to 2 eV compared to the clean metal substrate; SiO2 and TiO2 induce an increase of Φ of about 0.5-1 eV. The reasons for this behavior are different: for TiO2 and SiO2 the work function increase can be explained with the classical model of surface dipole due to metal-to-oxide charge transfer at the interface. On MgO/metal interfaces, where the charge transfer is negligible, the shift is due to the compression of the metal electron d. enforced by the oxide layer, with consequent change in surface dipole. By appropriately choosing the metal support and the oxide film one can design nanostructured materials with new properties.
- 10Prada, S.; Martinez, U.; Pacchioni, G. Phys. Rev. B 2008, 78, 23542310https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXit12mtA%253D%253D&md5=095bd822bcd8cb1875b1a6544af8d179Work function changes induced by deposition of ultrathin dielectric films on metals. A theoretical analysisPrada, Stefano; Martinez, Umberto; Pacchioni, GianfrancoPhysical Review B: Condensed Matter and Materials Physics (2008), 78 (23), 235423/1-235423/8CODEN: PRBMDO; ISSN:1098-0121. (American Physical Society)Ultrathin dielec. films deposited on a metal surface induce variations in the work function that can be relevant for the final properties of the metal/oxide interface. We analyze with the help of d.-functional theory calcns. the effect of depositing 3-layer films of insulating materials such as LiF, NaCl, MgO, CaS, and BaO on various (001) metal surfaces. The change in work function Δφ is due to 3 main contributions: an electrostatic "compression" effect which dominates for highly ionic films such as LiF, a charge-transfer effect which is largest for less ionic films such as BaO, and the surface relaxation induced by the formation of the interface bond which largely depends on the lattice mismatch between the dielec. film and the metal. Finally, we propose a universal correlation between the work function change and the energy difference between the position of the Fermi level of the metal surface and the top of the valence band of the dielec. film.
- 11Goniakowski, J.; Noguera, C. Phys. Rev. B 2009, 79, 155433There is no corresponding record for this reference.
- 12Netzer, F. P.; Allegretti, F.; Surnev, S. J. Vac. Sci. Technol., B 2010, 28, 112https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXjt1Wgtro%253D&md5=98216b8adab5d409051467b2431da843Low-dimensional oxide nanostructures on metals: Hybrid systems with novel propertiesNetzer, Falko P.; Allegretti, Francesco; Surnev, SvetlozarJournal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena (2010), 28 (1), 1-16CODEN: JVSTBM; ISSN:1071-1023. (American Institute of Physics)A review. Oxide nanostructures in low dimensions on well-defined metal surfaces form novel hybrid systems with tremendous potential and impact in fundamental research and for the emerging nanotechnologies. In contrast to bulk materials low-dimensional oxide nanostructures not only involve a large no. of undercoordinated atoms but their interaction with the metal substrate also provides constraints on their structure and morphol. and often yields elastic strain and/or uncompensated charge. These factors modify significantly the phys. and chem. properties of the nanophases as compared to bulk oxides. In this review the authors will examine critically the available data with respect to structure-property relationships of metal-supported oxide nanostructures in reduced dimensions. The connection between structure, elastic strain, and charge transfer on the one hand, and electronic and magnetic behavior on the other one, will be discussed. The novel chem. properties of the oxide-metal nanostructure systems will provide another focus of this review. (c) 2010 American Institute of Physics.
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- 14Pacchioni, G.; Giordano, L.; Baistrocchi, M. Phys. Rev. Lett. 2005, 94, 22610414https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXltVyhs7o%253D&md5=ecd86c5c65f0091150edf8a66953b68fCharging of Metal Atoms on Ultrathin MgO/Mo(100) FilmsPacchioni, Gianfranco; Giordano, Livia; Baistrocchi, MatteoPhysical Review Letters (2005), 94 (22), 226104/1-226104/4CODEN: PRLTAO; ISSN:0031-9007. (American Physical Society)The chem. activity of supported metal nanoclusters is enhanced by electronic charging induced by the interaction with surface defects. We use d. functional theory plane wave calcns. to show that charging of metal atoms with high electron affinity like Au is possible also in the absence of defects by atom deposition on ultrathin MgO films (1 to 3 layers) grown on Mo(100). The Au 6s level falls below the Fermi level of Mo, leading to electron transfer from Mo to Au by direct tunneling through the insulating MgO film. The effect is not obsd. for Pd, whose 5s empty level falls just above the Fermi level of Mo, or for thicker MgO films.
- 15Sterrer, M.; Risse, T.; Martinez Pozzoni, U.; Giordano, L.; Heyde, M.; Rust, H.-P.; Pacchioni, G.; Freund, H.-J. Phys. Rev. Lett. 2007, 98, 096107There is no corresponding record for this reference.
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- 23Shaikhutdinov, S.; Weiss, W. Surf. Sci. 1999, 432, L62723https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1MXlsVyhsLk%253D&md5=f75f89cdc97c2d5c1236670148fcd0feOxygen pressure dependence of the α-Fe2O3(0001) surface structureShaikhutdinov, Sh. K.; Weiss, W.Surface Science (1999), 432 (3), L627-L634CODEN: SUSCAS; ISSN:0039-6028. (Elsevier Science B.V.)The dependence of the α-Fe2O3(0001) hematite surface structure on ambient oxygen gas pressure was investigated with scanning tunneling microscopy and LEED. For this, thin epitaxial α-Fe2O3(0001) films grown onto a Pt(111) substrate were prepd. in oxygen partial pressures between 10-6 and 1 mbar at temps. around 830°C. In high pressures of 1 mbar an oxygen-terminated surface structure covers almost the whole sample surface. At pressures between 10-4 and 10-1 mbar comparable amts. of oxygen and iron-terminated surface areas coexist in neighboring domains. The lateral size of these domains decreases from values of 200-900 A for pressures between 10-3 and 10-1 mbar to values around 30 A at 10-4 mbar. At 10-5 mbar the oxygen-terminated surface areas completely vanish and an iron-terminated α-Fe2O3(0001) surface structure is formed, which is partly covered by disordered patches with lateral sizes of 10-20 A. Further decreasing the oxygen pressure to 10-6 mbar results in a partial redn. of the surface region and the formation of coexisting α-Fe2O3(0001) and FeO1-x(111) domains that are arranged in an ordered manner forming a superstructure known as "biphase structure".
- 24Lemire, C.; Bertarione, S.; Zecchina, A.; Scarano, D.; Chaka, A.; Shaikhutdinov, S.; Freund, H.-J. Phys. Rev. Lett. 2005, 94, 166101There is no corresponding record for this reference.
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- 28Kresse, G.; Furthmüller, J. Phys. Rev. B 1996, 54, 1116928https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28Xms1Whu7Y%253D&md5=9c8f6f298fe5ffe37c2589d3f970a697Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis setKresse, G.; Furthmueller, J.Physical Review B: Condensed Matter (1996), 54 (16), 11169-11186CODEN: PRBMDO; ISSN:0163-1829. (American Physical Society)The authors present an efficient scheme for calcg. the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrixes will be discussed. This approach is stable, reliable, and minimizes the no. of order Natoms3 operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special "metric" and a special "preconditioning" optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calcns. It will be shown that the no. of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order Natoms2 scaling is found for systems contg. up to 1000 electrons. If we take into account that the no. of k points can be decreased linearly with the system size, the overall scaling can approach Natoms. They have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large no. of different systems (liq. and amorphous semiconductors, liq. simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable.
- 29Perdew, J. P.; Chevary, J. A.; Vosko, S. H.; Jackson, K. A.; Pederson, M. R.; Singh, D. J.; Fiolhais, C. Phys. Rev. B 1992, 46, 667129https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK38XlvFyks7c%253D&md5=e52b617f523b1a8c545707544ce01d05Atoms, molecules, solids, and surfaces: applications of the generalized gradient approximation for exchange and correlationPerdew, John P.; Chevary, J. A.; Vosko, S. H.; Jackson, Koblar A.; Pederson, Mark R.; Singh, D. J.; Fiolhais, CarlosPhysical Review B: Condensed Matter and Materials Physics (1992), 46 (11), 6671-87CODEN: PRBMDO; ISSN:0163-1829.Generalized gradient approxns. (GGA's) seek to improve upon the accuracy of the local-spin-d. (LSD) approxn. in electronic-structure calcns. Perdew and Wang have developed a GGA based on real-space cutoff of the spurious long-range components of the second-order gradient expansion for the exchange-correlation hole. Authors have found that this d. functional performs well in numerical tests for a variety of systems: Total energies of 30 atoms are highly accurate. Ionization energies and electron affinities are improved in a statistical sense, although significant interconfigurational and interterm errors remain. Accurate atomization energies are found for seven hydrocarbon mols., with a rms error per bond of 0.1 eV, compared with 0.7 eV for the LSD approxn. and 2.4 eV for the Hartree-Fock approxn. For atoms and mols., there is a cancellation of error between d. functionals for exchange and correlation, which is most striking whenever the Hartree-Fock result is furthest from expt. The surprising LSD underestimation of the lattice consts. of Li and Na by 3-4% is cor., and the magnetic ground state of solid Fe is restored. The work function, surface energy (neglecting the long-range contribution), and curvature energy of a metallic surface are all slightly reduced in comparison with LSD. Taking account of the pos. long-range contribution, authors find surface and curvature energies in good agreement with exptl. or exact values. Finally, a way is found to visualize and understand the nonlocality of exchange and correlation, its origins, and its phys. effects.
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- 37Bader, R. F. W. Chem. Rev. 1991, 91, 89337https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK3MXkvFWgt7s%253D&md5=2f25f7fe95dc618987b7f5f7a781caacA quantum theory of molecular structure and its applicationsBader, Richard F. W.Chemical Reviews (Washington, DC, United States) (1991), 91 (5), 893-928CODEN: CHREAY; ISSN:0009-2665.A review with 119 refs.
- 38Henkelman, G.; Arnaldsson, A.; Jónsson, H. Comput. Mater. Sci. 2006, 36, 254There is no corresponding record for this reference.Tang, W.; Sanville, E.; Henkelman, G. J. Phys.: Condens. Matter 2009, 21, 08420438https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjsVWrtbs%253D&md5=6e957a5f7c9ffb86f1249625b6fbe729A grid-based Bader analysis algorithm without lattice biasTang, W.; Sanville, E.; Henkelman, G.Journal of Physics: Condensed Matter (2009), 21 (8), 084204/1-084204/7CODEN: JCOMEL; ISSN:0953-8984. (Institute of Physics Publishing)A computational method for partitioning a charge d. grid into Bader vols. is presented which is efficient, robust, and scales linearly with the no. of grid points. The partitioning algorithm follows the steepest ascent paths along the charge d. gradient from grid point to grid point until a charge d. max. is reached. In this paper, we describe how accurate off-lattice ascent paths can be represented with respect to the grid points. This improvement maintains the efficient linear scaling of an earlier version of the algorithm, and eliminates a tendency for the Bader surfaces to be aligned along the grid directions. As the algorithm assigns grid points to charge d. maxima, subsequent paths are terminated when they reach previously assigned grid points. It is this grid-based approach which gives the algorithm its efficiency, and allows for the anal. of the large grids generated from plane-wave-based d. functional theory calcns.
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