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Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells

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    Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells
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    † JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440, United States
    ‡ Department of Physics, University of Colorado, Boulder, Colorado 80309-0390, United States
    § National Institute of Standards and Technology, Boulder, Colorado 80305, United States
    *E-mail: [email protected]
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    The Journal of Physical Chemistry B

    Cite this: J. Phys. Chem. B 2011, 115, 18, 5365–5371
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    https://doi.org/10.1021/jp109408s
    Published March 9, 2011
    Copyright © 2011 American Chemical Society
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    Abstract

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    Optical two-dimensional Fourier-transform spectroscopy is used to study the heavy- and light-hole excitonic resonances in weakly disordered GaAs quantum wells. Homogeneous and inhomogeneous broadening contribute differently to the two-dimensional resonance line shapes, allowing separation of homogeneous and inhomogeneous line widths. The heavy-hole exciton exhibits more inhomogeneous than homogeneous broadening, whereas the light-hole exciton shows the reverse. This situation occurs because of the interplay between the length scale of the disorder and the exciton Bohr radius, which affects the exciton localization and scattering. Utilizing this separation of line widths, excitation-density-dependent measurements reveal that many-body interactions alter the homogeneous dephasing, while disorder-induced dephasing is unchanged.

    Copyright © 2011 American Chemical Society

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    The Journal of Physical Chemistry B

    Cite this: J. Phys. Chem. B 2011, 115, 18, 5365–5371
    Click to copy citationCitation copied!
    https://doi.org/10.1021/jp109408s
    Published March 9, 2011
    Copyright © 2011 American Chemical Society
    Request reuse permissions

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