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Ultrathin Anodic Aluminum Oxide Membranes for Production of Dense Sub-20 nm Nanoparticle Arrays

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† Institute of Chemical Physics, University of Latvia, 19 Raina Boulevard, LV-1586 Riga, Latvia
‡ MC2, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
*E-mail: [email protected]. Phone: +371 67033875.
Cite this: J. Phys. Chem. C 2014, 118, 16, 8685–8690
Publication Date (Web):March 18, 2014
https://doi.org/10.1021/jp412689y
Copyright © 2014 American Chemical Society
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    Abstract

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    We present a systematic study of membrane structure (pore diameter and arrangement) in anodized aluminum oxide (AAO) layers obtained by anodization voltages 8–20 V in sulfuric and 15–40 V in oxalic acid electrolyte solutions. Anodization of bulk aluminum in sulfuric acid at 10 V potential was found to be optimal for production or ultrathin freestanding membranes with pore diameter in sub-20 nm range. The developed process with slow electrochemical reaction results in AAO membranes with thickness below 70 nm. The minimum required time for formation of continuous AAO membrane was determined and influence of electrolyte concentration on pore diameter in membrane after barrier layer removal analyzed. Finally, we demonstrate a method of membrane transfer onto a different surface and using it for masked deposition of dense nanoparticle arrays with diameters below 20 nm.

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