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Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

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National Centre for Plasma Science and Technology, The Rince Institute, School of Electronic Engineering, §School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 Ireland
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
Cite this: J. Phys. Chem. C 2014, 118, 40, 23226–23232
Publication Date (Web):September 10, 2014
https://doi.org/10.1021/jp5053997
Copyright © 2014 American Chemical Society

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    Abstract

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    p-type transparent conducting CuBr thin films were grown by thermal evaporation of CuBr followed by oxygen plasma treatment. Efficient incorporation of oxygen into the CuBr films was revealed, and the influence of plasma exposure on the electrical, structural, optical, and electronic properties of CuBr films was investigated. X-ray diffraction (XRD) analysis indicated the Zincblende structure of the oxygen plasma treated CuBr (OCB) films with the formation of nanocrystalline grains preferentially oriented along the (111) direction. p-type conducting OCB films show >85% average transmittance along with hole concentration, conductivity and Hall mobility values of ∼1019 cm–3, ∼1.5 S cm–1 and ∼0.45 cm2 V–1 s–1, respectively. The X-ray photoelectron spectra of the OCB films demonstrated that the plasma exposure resulted in a significant increase in the O 1s signal at the surface of OCB films. On the basis of the experimental results from the Hall measurements and X-ray photoemission, a possible explanation comprising the formation of a surface CuO layer is also proposed to elucidate the increase in the p-type conductivity of the OCB films. Strong room temperature emission of OCB films at around 416 nm was also observed, the intensity of which decreased with the increase of oxygen plasma exposure time. The results present oxygen plasma exposure as a simple and promising technique for the production of CuBr-based p-type materials for future transparent electronics.

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    SIMS concentration profile of the OCB5 films. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cited By

    This article is cited by 4 publications.

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    2. Xiaoxiao Wang, Awei Guo, Yunlong Wang, Zhipeng Chen, Yuxuan Guo, Haijiao Xie, Weilong Shan, Junjie Zhang. Br-doped Cu Nanoparticle Formed by In Situ Restructuring for Highly Efficient Electrochemical Reduction of CO2 to Formate. Journal of Colloid and Interface Science 2023, 425 https://doi.org/10.1016/j.jcis.2023.09.072
    3. Bin Luo, Xiaoting Zhang, John Z. Tubbesing, Avishek Banik, Jay A. Switzer. Epitaxial Electrodeposition of Wide Bandgap Cuprous Bromide on Silver via a Silver Bromide Buffer Layer. Journal of The Electrochemical Society 2022, 169 (9) , 092512. https://doi.org/10.1149/1945-7111/ac8eeb
    4. Rajani K. Vijayaraghavan, Deepak Chandran, Ratheesh K. Vijayaraghavan, Anthony P. McCoy, Stephen Daniels, Patrick J. McNally. Highly enhanced UV responsive conductivity and blue emission in transparent CuBr films: implication for emitter and dosimeter applications. J. Mater. Chem. C 2017, 5 (39) , 10270-10279. https://doi.org/10.1039/C7TC02838E

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