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Download Hi-Res ImageDownload to MS-PowerPointCite This:J. Phys. Chem. Lett. 2011, 2, 12, 1368-1371
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Absence of Postnanosecond Charge Carrier Relaxation in Poly(3-hexylthiophene)/Fullerene Blends

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Experimental Physics VI, Julius-Maximilian-University of Würzburg, Am Hubland, 97074 Würzburg, Germany
Opto-electronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL, Delft, The Netherlands
Dutch Polymer Institute (DPI), P.O. Box 902,5600 AX Eindhoven, The Netherlands
Functional Materials for Energy Technology, Bavarian Centre for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany
E-mail: [email protected]
Cite this: J. Phys. Chem. Lett. 2011, 2, 12, 1368–1371
Publication Date (Web):May 18, 2011
https://doi.org/10.1021/jz200569h
Copyright © 2011 American Chemical Society
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Abstract

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In this work, the relaxation of positive charges and charge carrier recombination in blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) are studied by combining time-resolved photoinduced optical absorption and microwave photoconductance measurements. The decay kinetics of both techniques are identical at temperatures > 150 K over a broad time window (50 ns–100 μs). An important conclusion from these observations is that the average mobility of the positive charges remains constant, and relaxation into deeper traps does not occur. This is in contrast to the idea that charges are rapidly localized in trap states and subsequent thermal release results in progressively deeper trapping, which reduces the mobility. At 300 K, a lower limit of the local hole mobility of 0.012 cm2/(V s) is found combined with a lifetime on the order of 1 μs.

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Plot of the dependence of the maximum of the photoconductivitiy normalized to the absorbed number of photons versus the fluence determined at different temperatures. This material is available free of charge via the Internet at http://pubs.acs.org.

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