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Reversible Defect Engineering of Single-Walled Carbon Nanotubes Using Scanning Tunneling Microscopy

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Institute of Applied Physics, Crest, University of Tsukuba, Tsukuba, 305-8573, Japan, Department of Chemistry, Nagoya University, Nagoya, 464-86,2, Japan, NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan, and Institut d'Electronique, de Microélectronique, et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cédex, France
Cite this: Nano Lett. 2007, 7, 12, 3623–3627
Publication Date (Web):November 23, 2007
https://doi.org/10.1021/nl071845c
Copyright © 2007 American Chemical Society
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Abstract

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The experimental creation and annihilation of defects on single-walled carbon nanotubes (SWCNT) with the tip of a scanning tunneling microscope are reported. The technique used to manipulate the wall structure of a nanotube at the atomic scale consists of a voltage ramp applied at constant tunneling current between the tip and the nanotube adsorbed on a gold substrate. While topographic images show an interference pattern at the defect position, spatially resolved tunneling spectroscopy reveals the presence of localized states in the band gap of the nanotube. Removal of the defect by the same procedure demonstrates the reversibility of the process. Such a precise control in the local modification of the nanotube wall opens up new opportunities to tailor SWCNT electronic properties at will.

†

 University of Tsukuba.

‖

 IEMN (CNRS, UMR 8520).

‡

 Nagoya University.

§

 NTT Corporation.

*

 Corresponding author. Website:  http://dora.ims.tsukuba.ac.jp.

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Figures showing different sequences of creation and annihilation events. This material is available free of charge via the Internet at http://pubs.acs.org.

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