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Low Operating Bias and Matched Input−Output Characteristics in Graphene Logic Inverters

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† International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
‡ Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
§ Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
* To whom correspondence should be addressed, [email protected]
Cite this: Nano Lett. 2010, 10, 7, 2357–2362
Publication Date (Web):June 2, 2010
https://doi.org/10.1021/nl100031x
Copyright © 2010 American Chemical Society
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Abstract

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We developed a simple and novel method to fabricate complementary-like logic inverters based on ambipolar graphene field-effect transistors (FETs). We found that the top gate stacks (with both the metal and oxide layers) can be simply prepared with only one-step deposition process and show high capacitive efficiency. By employing such a top gate as the operating terminal, the operating bias can be lowered within 2 V. In addition, the complementary p- and n-type FET pairs can be also simply fulfilled through potential superposition effect from the drain bias. The inverters can be operated, with up to 4−7 voltage gains, in both the first and third quadrants due to the ambipolarity of graphene FETs. For the first time, a match between the input and output voltages is achieved in graphene logic devices, indicating the potential in direct cascading of multiple devices for future nanoelectronic applications.

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Description of top gate stacks fabrication, capacitance and thickness estimations, leakage versus gate bias, and mobility estimation of the single-layer graphene underneath natural alumina layers. This material is available free of charge via the Internet at http://pubs.acs.org.

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  1. Myungwoo Son, Hanggyu Kim, Jaewon Jang, So-Young Kim, Hyun Chul Ki, Byoung Hun Lee, In S. Kim, Moon-Ho Ham. Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices. ACS Applied Materials & Interfaces 2019, 11 (50) , 47247-47252. https://doi.org/10.1021/acsami.9b16417
  2. Seongchan Kim, Young Chan Kim, Young Jin Choi, Hwi Je Woo, Young Jae Song, Moon Sung Kang, Changgu Lee, Jeong Ho Cho. Vertically Stacked CVD-Grown 2D Heterostructure for Wafer-Scale Electronics. ACS Applied Materials & Interfaces 2019, 11 (38) , 35444-35450. https://doi.org/10.1021/acsami.9b11206
  3. Yanfang Meng, Junqing Zhao, XiXi Yang, Chunlin Zhao, Shanshan Qin, Jeong Ho Cho, Chi Zhang, Qijun Sun, Zhong Lin Wang. Mechanosensation-Active Matrix Based on Direct-Contact Tribotronic Planar Graphene Transistor Array. ACS Nano 2018, 12 (9) , 9381-9389. https://doi.org/10.1021/acsnano.8b04490
  4. Che-Hung Liu, Qi Chen, Chang-Hua Liu, and Zhaohui Zhong . Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification. Nano Letters 2016, 16 (2) , 1064-1068. https://doi.org/10.1021/acs.nanolett.5b04203
  5. Weinan Zhu, Maruthi N. Yogeesh, Shixuan Yang, Sandra H. Aldave, Joon-Seok Kim, Sushant Sonde, Li Tao, Nanshu Lu, and Deji Akinwande . Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator. Nano Letters 2015, 15 (3) , 1883-1890. https://doi.org/10.1021/nl5047329
  6. Erica Guerriero, Laura Polloni, Massimiliano Bianchi, Ashkan Behnam, Enrique Carrion, Laura Giorgia Rizzi, Eric Pop, and Roman Sordan . Gigahertz Integrated Graphene Ring Oscillators. ACS Nano 2013, 7 (6) , 5588-5594. https://doi.org/10.1021/nn401933v
  7. Beom Joon Kim, Seoung-Ki Lee, Moon Sung Kang, Jong-Hyun Ahn, and Jeong Ho Cho . Coplanar-Gate Transparent Graphene Transistors and Inverters on Plastic. ACS Nano 2012, 6 (10) , 8646-8651. https://doi.org/10.1021/nn3020486
  8. Seung Min Song, Jong Kyung Park, One Jae Sul, and Byung Jin Cho . Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance. Nano Letters 2012, 12 (8) , 3887-3892. https://doi.org/10.1021/nl300266p
  9. Laura Giorgia Rizzi, Massimiliano Bianchi, Ashkan Behnam, Enrique Carrion, Erica Guerriero, Laura Polloni, Eric Pop, and Roman Sordan . Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions. Nano Letters 2012, 12 (8) , 3948-3953. https://doi.org/10.1021/nl301079r
  10. Seoung-Ki Lee, Ho Young Jang, Sukjae Jang, Euiyoung Choi, Byung Hee Hong, Jaichan Lee, Sungho Park, and Jong-Hyun Ahn . All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates. Nano Letters 2012, 12 (7) , 3472-3476. https://doi.org/10.1021/nl300948c
  11. Chun-Chieh Lu, Yung-Chang Lin, Chao-Hui Yeh, Ju-Chun Huang, and Po-Wen Chiu . High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics. ACS Nano 2012, 6 (5) , 4469-4474. https://doi.org/10.1021/nn301199j
  12. Alexander Badmaev, Yuchi Che, Zhen Li, Chuan Wang, and Chongwu Zhou . Self-Aligned Fabrication of Graphene RF Transistors with T-Shaped Gate. ACS Nano 2012, 6 (4) , 3371-3376. https://doi.org/10.1021/nn300393c
  13. Branimir Radisavljevic, Michael Brian Whitwick, and Andras Kis . Integrated Circuits and Logic Operations Based on Single-Layer MoS2. ACS Nano 2011, 5 (12) , 9934-9938. https://doi.org/10.1021/nn203715c
  14. Hong Li, Qing Zhang, Chao Liu, Shouheng Xu, and Pingqi Gao . Ambipolar to Unipolar Conversion in Graphene Field-Effect Transistors. ACS Nano 2011, 5 (4) , 3198-3203. https://doi.org/10.1021/nn200327q
  15. Kai Yan, Hailin Peng, Yu Zhou, Hui Li, and Zhongfan Liu . Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition. Nano Letters 2011, 11 (3) , 1106-1110. https://doi.org/10.1021/nl104000b
  16. Song-Lin Li, Hisao Miyazaki, Hidefumi Hiura, Chuan Liu, and Kazuhito Tsukagoshi . Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels. ACS Nano 2011, 5 (1) , 500-506. https://doi.org/10.1021/nn102346b
  17. Hiroki Ago, Yoshito Ito, Noriaki Mizuta, Kazuma Yoshida, Baoshan Hu, Carlo M. Orofeo, Masaharu Tsuji, Ken-ichi Ikeda, and Seigi Mizuno . Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire. ACS Nano 2010, 4 (12) , 7407-7414. https://doi.org/10.1021/nn102519b
  18. Wennan Hu, Zhe Sheng, Xiang Hou, Huawei Chen, Zengxing Zhang, David Wei Zhang, Peng Zhou. Ambipolar 2D Semiconductors and Emerging Device Applications. Small Methods 2021, 5 (1) , 2000837. https://doi.org/10.1002/smtd.202000837
  19. Ali Safari, Massoud Dousti. Ring oscillators based on monolayer Graphene FET. Analog Integrated Circuits and Signal Processing 2020, 102 (3) , 637-644. https://doi.org/10.1007/s10470-020-01624-x
  20. Osama Saber, Hicham Mahfoz Kotb. Designing Dual-Function Nanostructures for Water Purification in Sunlight. Applied Sciences 2020, 10 (5) , 1786. https://doi.org/10.3390/app10051786
  21. Mamina Sahoo, Jer-Chyi Wang, Yuta Nishina, Zhiwei Liu, Jong-Shing Bow, Chao-Sung Lai. Robust sandwiched fluorinated graphene for highly reliable flexible electronics. Applied Surface Science 2020, 499 , 143839. https://doi.org/10.1016/j.apsusc.2019.143839
  22. Shuchao Qin, Yuanda Liu, Hongzhu Jiang, Yongbing Xu, Yi Shi, Rong Zhang, Fengqiu Wang. All-carbon hybrids for high-performance electronics, optoelectronics and energy storage. Science China Information Sciences 2019, 62 (12) https://doi.org/10.1007/s11432-019-2676-x
  23. Yannan Xu, Jinshun Bi, Yudong Li, Kai Xi, Linjie Fan, Ming Liu, M. Sandip, Li Luo. The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer. Microelectronics Reliability 2019, 100-101 , 113355. https://doi.org/10.1016/j.microrel.2019.06.047
  24. So-Young Kim, Yun Ji Kim, Ukjin Jung, Byoung Hun Lee. Chemically induced Fermi level pinning effects of high-k dielectrics on graphene. Scientific Reports 2018, 8 (1) https://doi.org/10.1038/s41598-018-21055-z
  25. Suresh Kumar Garlapati, Mitta Divya, Ben Breitung, Robert Kruk, Horst Hahn, Subho Dasgupta. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. Advanced Materials 2018, 30 (40) , 1707600. https://doi.org/10.1002/adma.201707600
  26. Tian Carey, Stefania Cacovich, Giorgio Divitini, Jiesheng Ren, Aida Mansouri, Jong M. Kim, Chaoxia Wang, Caterina Ducati, Roman Sordan, Felice Torrisi. Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics. Nature Communications 2017, 8 (1) https://doi.org/10.1038/s41467-017-01210-2
  27. Weinan Zhu, Saungeun Park, Maruthi N Yogeesh, Deji Akinwande. Advancements in 2D flexible nanoelectronics: from material perspectives to RF applications. Flexible and Printed Electronics 2017, 2 (4) , 043001. https://doi.org/10.1088/2058-8585/aa84a4
  28. Himadri Pandey, Satender Kataria, Amit Gahoi, Max C. Lemme. High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs. IEEE Electron Device Letters 2017, 38 (12) , 1747-1750. https://doi.org/10.1109/LED.2017.2768076
  29. Onejae Sul, Kyumin Kim, Yungwoo Jung, Eunsuk Choi, Seung-Beck Lee. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations. Nanotechnology 2017, 28 (37) , 37LT01. https://doi.org/10.1088/1361-6528/aa8335
  30. Jingang Wang, Fengcai Ma, Wenjie Liang, Mengtao Sun. Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures. Materials Today Physics 2017, 2 , 6-34. https://doi.org/10.1016/j.mtphys.2017.07.001
  31. Tanmoy Das, Jong-Hyun Ahn. Development of electronic devices based on two-dimensional materials. FlatChem 2017, 3 , 43-63. https://doi.org/10.1016/j.flatc.2017.05.001
  32. Yang Yang, Jing Dai, Yongjun Li, Mingchen Jia, Xiaoyu Huang. Less defective fluorine-containing graphene with good dispersity: Preparation, characterization, and application in transparent conductive thin film. Carbon 2017, 115 , 285-292. https://doi.org/10.1016/j.carbon.2017.01.021
  33. Mohammad Rahman, Kenneth Davey, Shi-Zhang Qiao. Advent of 2D Rhenium Disulfide (ReS 2 ): Fundamentals to Applications. Advanced Functional Materials 2017, 27 (10) , 1606129. https://doi.org/10.1002/adfm.201606129
  34. Rongzhou Zeng, Ping Li, Yiwen Wang, Gang Wang, Qingwei Zhang, Yongbo Liao, Xiaodong Xie. An embedded gate graphene field effect transistor with natural Al oxidization dielectrics and its application to frequency doubler. IEICE Electronics Express 2017, 14 (20) , 20170707-20170707. https://doi.org/10.1587/elex.14.20170707
  35. Kyunghee Choi, Young Tack Lee, Seongil Im. Two-dimensional van der Waals nanosheet devices for future electronics and photonics. Nano Today 2016, 11 (5) , 626-643. https://doi.org/10.1016/j.nantod.2016.08.009
  36. Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong Li, Taishi Takenobu. Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers. Advanced Materials 2016, 28 (21) , 4111-4119. https://doi.org/10.1002/adma.201503872
  37. Houk Jang, Yong Ju Park, Xiang Chen, Tanmoy Das, Min-Seok Kim, Jong-Hyun Ahn. Graphene-Based Flexible and Stretchable Electronics. Advanced Materials 2016, 28 (22) , 4184-4202. https://doi.org/10.1002/adma.201504245
  38. Yong Cao, Guoting Li, Xinbao Li. Graphene/layered double hydroxide nanocomposite: Properties, synthesis, and applications. Chemical Engineering Journal 2016, 292 , 207-223. https://doi.org/10.1016/j.cej.2016.01.114
  39. Hsiao-Yu Chang, Weinan Zhu, Deji Akinwande. Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors. 2016,,, 301-328. https://doi.org/10.1201/b19623-14
  40. , , . 2D Materials for Nanoelectronics. 2016,,https://doi.org/10.1201/b19623
  41. Juan M. Marmolejo-Tejada, Jaime Velasco-Medina. Review on graphene nanoribbon devices for logic applications. Microelectronics Journal 2016, 48 , 18-38. https://doi.org/10.1016/j.mejo.2015.11.006
  42. B.M. Nichols, A.L. Mazzoni, M.L. Chin, P.B. Shah, S. Najmaei, R.A. Burke, M. Dubey. Advances in 2D Materials for Electronic Devices. 2016,,, 221-277. https://doi.org/10.1016/bs.semsem.2016.03.001
  43. . 2D Materials. 2016,,https://doi.org/
  44. Song-Lin Li, Kazuhito Tsukagoshi, Emanuele Orgiu, Paolo Samorì. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Chemical Society Reviews 2016, 45 (1) , 118-151. https://doi.org/10.1039/C5CS00517E
  45. R. Sreenath, B. Bala Tripura Sundari. Compact model for switching characteristics of graphene field effect transistor. 2016,,, 020013. https://doi.org/10.1063/1.4945133
  46. . . 2010,,https://doi.org/
  47. Song-Lin Li, Kazuhito Tsukagoshi. Carrier Injection and Scattering in Atomically Thin Chalcogenides. Journal of the Physical Society of Japan 2015, 84 (12) , 121011. https://doi.org/10.7566/JPSJ.84.121011
  48. Jincheng Fan, Tengfei Li, Igor Djerdj. Two-Dimensional Atomic Crystals: Paving New Ways for Nanoelectronics. Journal of Electronic Materials 2015, 44 (11) , 4080-4097. https://doi.org/10.1007/s11664-015-3947-6
  49. Erfu Liu, Yajun Fu, Yaojia Wang, Yanqing Feng, Huimei Liu, Xiangang Wan, Wei Zhou, Baigeng Wang, Lubin Shao, Ching-Hwa Ho, Ying-Sheng Huang, Zhengyi Cao, Laiguo Wang, Aidong Li, Junwen Zeng, Fengqi Song, Xinran Wang, Yi Shi, Hongtao Yuan, Harold Y. Hwang, Yi Cui, Feng Miao, Dingyu Xing. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nature Communications 2015, 6 (1) https://doi.org/10.1038/ncomms7991
  50. Mario Iannazzo, Valerio Lo Muzzo, Saul Rodriguez, Himadri Pandey, Ana Rusu, Max Lemme, Eduard Alarcon. Optimization of a Compact $I$ –$V$ Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration. IEEE Transactions on Electron Devices 2015, 62 (11) , 3870-3875. https://doi.org/10.1109/TED.2015.2479036
  51. Pankaj Sharma, Laurent Syavoch Bernard, Antonios Bazigos, Arnaud Magrez, Adrian Mihai Ionescu. Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature. IEEE Electron Device Letters 2015, 36 (8) , 865-867. https://doi.org/10.1109/LED.2015.2445858
  52. P. Sharma, L.S. Bernard, A. Bazigos, A. Magrez, A.M. Ionescu. Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature. 2015,,, 267-268. https://doi.org/10.1109/DRC.2015.7175676
  53. . 2015 73rd Annual Device Research Conference (DRC). 2015,,https://doi.org/
  54. Mario Iannazzo, Valerio Lo Muzzo, Saul Rodriguez, Ana Rusu, Max Lemme, Eduard Alarcon. Design exploration of graphene-FET based ring-oscillator circuits: A test-bench for large-signal compact models. 2015,,, 2716-2719. https://doi.org/10.1109/ISCAS.2015.7169247
  55. . 2015 IEEE International Symposium on Circuits and Systems (ISCAS). 2015,,https://doi.org/
  56. Jie Meng, Jing-Jing Chen, Liang Zhang, Ya-Qing Bie, Zhi-Min Liao, Da-Peng Yu. Vertically Architectured Stack of Multiple Graphene Field-Effect Transistors for Flexible Electronics. Small 2015, 11 (14) , 1660-1664. https://doi.org/10.1002/smll.201402422
  57. Sunil P. Lonkar, Yogesh S. Deshmukh, Ahmed A. Abdala. Recent advances in chemical modifications of graphene. Nano Research 2015, 8 (4) , 1039-1074. https://doi.org/10.1007/s12274-014-0622-9
  58. Andrea C. Ferrari, Francesco Bonaccorso, Vladimir Fal'ko, Konstantin S. Novoselov, Stephan Roche, Peter Bøggild, Stefano Borini, Frank H. L. Koppens, Vincenzo Palermo, Nicola Pugno, José A. Garrido, Roman Sordan, Alberto Bianco, Laura Ballerini, Maurizio Prato, Elefterios Lidorikis, Jani Kivioja, Claudio Marinelli, Tapani Ryhänen, Alberto Morpurgo, Jonathan N. Coleman, Valeria Nicolosi, Luigi Colombo, Albert Fert, Mar Garcia-Hernandez, Adrian Bachtold, Grégory F. Schneider, Francisco Guinea, Cees Dekker, Matteo Barbone, Zhipei Sun, Costas Galiotis, Alexander N. Grigorenko, Gerasimos Konstantatos, Andras Kis, Mikhail Katsnelson, Lieven Vandersypen, Annick Loiseau, Vittorio Morandi, Daniel Neumaier, Emanuele Treossi, Vittorio Pellegrini, Marco Polini, Alessandro Tredicucci, Gareth M. Williams, Byung Hee Hong, Jong-Hyun Ahn, Jong Min Kim, Herbert Zirath, Bart J. van Wees, Herre van der Zant, Luigi Occhipinti, Andrea Di Matteo, Ian A. Kinloch, Thomas Seyller, Etienne Quesnel, Xinliang Feng, Ken Teo, Nalin Rupesinghe, Pertti Hakonen, Simon R. T. Neil, Quentin Tannock, Tomas Löfwander, Jari Kinaret. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 2015, 7 (11) , 4598-4810. https://doi.org/10.1039/C4NR01600A
  59. Abhay A. Sagade, Daniel Neumaier, Daniel Schall, Martin Otto, Amaia Pesquera, Alba Centeno, Amaia Zurutuza Elorza, Heinrich Kurz. Highly air stable passivation of graphene based field effect devices. Nanoscale 2015, 7 (8) , 3558-3564. https://doi.org/10.1039/C4NR07457B
  60. Massimiliano Bianchi, Erica Guerriero, Marco Fiocco, Ruggero Alberti, Laura Polloni, Ashkan Behnam, Enrique A. Carrion, Eric Pop, Roman Sordan. Scaling of graphene integrated circuits. Nanoscale 2015, 7 (17) , 8076-8083. https://doi.org/10.1039/C5NR01126D
  61. Seong C. Jun. High-Frequency Devices. 2014,,, 111-148. https://doi.org/10.1002/9783527677788.ch5
  62. . Graphene Optoelectronics. 2014,,https://doi.org/10.1002/9783527677788
  63. Ime J. Umoh, Tom J. Kazmierski. Temperature dependent graphene channel - SPICE implementation. 2014,,, 1012-1017. https://doi.org/10.1109/NANO.2014.6967963
  64. . 14th IEEE International Conference on Nanotechnology. 2014,,https://doi.org/
  65. Beibei Zhan, Chen Li, Jun Yang, Gareth Jenkins, Wei Huang, Xiaochen Dong. Graphene Field-Effect Transistor and Its Application for Electronic Sensing. Small 2014, 6 , n/a-n/a. https://doi.org/10.1002/smll.201400463
  66. K Tsukagoshi, S-L Li, H Miyazaki, A Aparecido-Ferreira, S Nakaharai. Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics. Journal of Physics D: Applied Physics 2014, 47 (9) , 094003. https://doi.org/10.1088/0022-3727/47/9/094003
  67. Seoung-Ki Lee, S M Humayun Kabir, Bhupendra K Sharma, Beom Joon Kim, Jeong Ho Cho, Jong-Hyun Ahn. Photo-patternable ion gel-gated graphene transistors and inverters on plastic. Nanotechnology 2014, 25 (1) , 014002. https://doi.org/10.1088/0957-4484/25/1/014002
  68. Yen-Fu Lin, Wenwu Li, Song-Lin Li, Yong Xu, Alex Aparecido-Ferreira, Katsuyoshi Komatsu, Huabin Sun, Shu Nakaharai, Kazuhito Tsukagoshi. Barrier inhomogeneities at vertically stacked graphene-based heterostructures. Nanoscale 2014, 6 (2) , 795-799. https://doi.org/10.1039/C3NR03677D
  69. Seunghyun Lee, Zhaohui Zhong. Nanoelectronic circuits based on two-dimensional atomic layer crystals. Nanoscale 2014, 6 (22) , 13283-13300. https://doi.org/10.1039/C4NR03670K
  70. Xingke Cai, Renzhi Ma, Tadashi C. Ozawa, Nobuyuki Sakai, Asami Funatsu, Takayoshi Sasaki. Superlattice assembly of graphene oxide (GO) and titania nanosheets: fabrication, in situ photocatalytic reduction of GO and highly improved carrier transport. Nanoscale 2014, 6 (23) , 14419-14427. https://doi.org/10.1039/C4NR04830J
  71. Roman Sordan, Andrea C. Ferrari. Gigahertz multi-transistor graphene integrated circuits. 2013,,, 1.1.1-1.1.7. https://doi.org/10.1109/IEDM.2013.6724538
  72. . 2013 IEEE International Electron Devices Meeting. 2013,,https://doi.org/
  73. Wonjae Kim, Juha Riikonen, Changfeng Li, Ya Chen, Harri Lipsanen. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor. Nanotechnology 2013, 24 (39) , 395202. https://doi.org/10.1088/0957-4484/24/39/395202
  74. Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang, Lili Yu, Yumeng Shi, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomas Palacios. Large-Area 2-D Electronics: Materials, Technology, and Devices. Proceedings of the IEEE 2013, 101 (7) , 1638-1652. https://doi.org/10.1109/JPROC.2013.2251311
  75. In-Yeal Lee, Hyung-Youl Park, Jin-Hyung Park, Jinyeong Lee, Woo-Shik Jung, Hyun-Yong Yu, Sang-Woo Kim, Gil-Ho Kim, Jin-Hong Park. Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter. Organic Electronics 2013, 14 (6) , 1586-1590. https://doi.org/10.1016/j.orgel.2013.03.022
  76. Ime J. Umoh, Tom J. Kazmierski. A floating gate graphene FET complementary inverter with symmetrical transfer characteristics. 2013,,, 2071-2074. https://doi.org/10.1109/ISCAS.2013.6572281
  77. . 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013). 2013,,https://doi.org/
  78. Ime J. Umoh, Tom J. Kazmierski, Bashir M. Al-Hashimi. A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation. IEEE Transactions on Nanotechnology 2013, 12 (3) , 427-435. https://doi.org/10.1109/TNANO.2013.2253490
  79. Yanjing Li, Nadya Mason. Tunneling spectroscopy of graphene using planar Pb probes. Applied Physics Letters 2013, 102 (2) , 023102. https://doi.org/10.1063/1.4775600
  80. Mei Yin Chan, Katsuyoshi Komatsu, Song-Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates. Nanoscale 2013, 5 (20) , 9572. https://doi.org/10.1039/c3nr03220e
  81. Xiaomu Wang, Haitao Xu, Jie Min, Lian-Mao Peng, Jian-Bin Xu. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. Nanoscale 2013, 5 (7) , 2811. https://doi.org/10.1039/c3nr33940h
  82. H. S. Song, S. L. Li, H. Miyazaki, S. Sato, K. Hayashi, A. Yamada, N. Yokoyama, K. Tsukagoshi. Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition. Scientific Reports 2012, 2 (1) https://doi.org/10.1038/srep00337
  83. Hong-Yan Chen, Joerg Appenzeller. On the Voltage Gain of Complementary Graphene Voltage Amplifiers With Optimized Doping. IEEE Electron Device Letters 2012, 33 (10) , 1462-1464. https://doi.org/10.1109/LED.2012.2207084
  84. Michael V. Lee, Hidefumi Hiura, Anastasia V. Tyurnina, Kazuhito Tsukagoshi. Controllable gallium melt-assisted interfacial graphene growth on silicon carbide. Diamond and Related Materials 2012, 24 , 34-38. https://doi.org/10.1016/j.diamond.2011.10.003
  85. Erica Guerriero, Laura Polloni, Laura Giorgia Rizzi, Massimiliano Bianchi, Giovanni Mondello, Roman Sordan. Graphene Audio Voltage Amplifier. Small 2012, 8 (3) , 357-361. https://doi.org/10.1002/smll.201102141
  86. Raghu Murali. Graphene Transistors. 2012,,, 51-91. https://doi.org/10.1007/978-1-4614-0548-1_3
  87. . Graphene Nanoelectronics. 2012,,https://doi.org/10.1007/978-1-4614-0548-1
  88. Seunghyun Lee, Kyunghoon Lee, Chang-Hua Liu, Girish S. Kulkarni, Zhaohui Zhong. Flexible and transparent all-graphene circuits for quaternary digital modulations. Nature Communications 2012, 3 (1) https://doi.org/10.1038/ncomms2021
  89. László P. Biró, Péter Nemes-Incze, Philippe Lambin. Graphene: nanoscale processing and recent applications. Nanoscale 2012, 4 (6) , 1824-1839. https://doi.org/10.1039/C1NR11067E
  90. Dincer Unluer, Frank Tseng, Avik W. Ghosh. Physics-based GNRFET compact model for digital circuit design. 2011,,, 1-2. https://doi.org/10.1109/ISDRS.2011.6135259
  91. . 2011 International Semiconductor Device Research Symposium (ISDRS). 2011,,https://doi.org/
  92. Joong Gun Oh, Yunsang Shin, Woo Cheol Shin, Onejae Sul, Byung Jin Cho. Dirac voltage tunability by Hf 1−x La x O gate dielectric composition modulation for graphene field effect devices. Applied Physics Letters 2011, 99 (19) , 193503. https://doi.org/10.1063/1.3659691
  93. Adarsh Sagar, Kannan Balasubramanian, Marko Burghard, Klaus Kern, Roman Sordan. Polymer-electrolyte gated graphene transistors for analog and digital phase detection. Applied Physics Letters 2011, 99 (4) , 043307. https://doi.org/10.1063/1.3615247
  94. Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device. Japanese Journal of Applied Physics 2011, 50 (7) , 070113. https://doi.org/10.1143/JJAP.50.070113
  95. Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device. Japanese Journal of Applied Physics 2011, 50 (7R) , 070113. https://doi.org/10.7567/JJAP.50.070113
  96. Song-Lin Li, Hisao Miyazaki, Michael V. Lee, Chuan Liu, Akinobu Kanda, Kazuhito Tsukagoshi. Complementary-Like Graphene Logic Gates Controlled by Electrostatic Doping. Small 2011, 7 (11) , 1552-1556. https://doi.org/10.1002/smll.201100318
  97. Hong-Yan Chen, Joerg Appenzeller. Complementary-type graphene inverters operating at room-temperature. 2011,,, 33-34. https://doi.org/10.1109/DRC.2011.5994408
  98. . 69th Device Research Conference. 2011,,https://doi.org/
  99. Daniel Kalblein, Bernhard Fenk, Kersten Hahn, Ute Zschieschang, Klaus Kern, Hagen Klauk. Aluminum top-gate ZnO nanowire transistors with improved transconductance. 2011,,, 249-250. https://doi.org/10.1109/DRC.2011.5994518
  100. . 69th Device Research Conference. 2011,,https://doi.org/

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