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Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field

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† MANA, NIMS, Namiki, Tsukuba 305-0047, Japan
‡ CREST, JST, Kawaguchi 332-0012, Japan
§ AIST, Higashi, Tsukuba 305-8562, Japan
∥ Institute of Physics
⊥ Center for Computational Sciences
University of Tsukuba, Tsukuba 305-8571, Japan
* To whom corresponding should be addressed. E-mail: [email protected]
Cite this: Nano Lett. 2010, 10, 10, 3888–3892
Publication Date (Web):August 30, 2010
https://doi.org/10.1021/nl1015365
Copyright © 2010 American Chemical Society
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Abstract

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Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0−1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility. These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene field effect transistor.

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