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Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires

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† International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
‡ PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama, 332-0012, Japan
§ Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
∥ Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
*E-mail: [email protected]
Cite this: Nano Lett. 2011, 11, 2, 651–656
Publication Date (Web):January 24, 2011
https://doi.org/10.1021/nl103773e
Copyright © 2011 American Chemical Society
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Abstract

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Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering. Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.

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