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Mapping of Local Electrical Properties in Epitaxial Graphene Using Electrostatic Force Microscopy

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1 National Physical Laboratory, Teddington, TW11 0LW, United Kingdom
2 Linköping University, Linköping, SE-581 83 Sweden
*E-mail: [email protected]. Phone: +44 20 8943 6143.
Cite this: Nano Lett. 2011, 11, 6, 2324–2328
Publication Date (Web):April 28, 2011
https://doi.org/10.1021/nl200581g
Copyright © 2011 American Chemical Society
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Abstract

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Local electrical characterization of epitaxial graphene grown on 4H-SiC(0001) using electrostatic force microscopy (EFM) in ambient conditions and at elevated temperatures is presented. EFM provides a straightforward identification of graphene with different numbers of layers on the substrate where topographical determination is hindered by adsorbates. Novel EFM spectroscopy has been developed measuring the EFM phase as a function of the electrical DC bias, establishing a rigorous way to distinguish graphene domains and facilitating optimization of EFM imaging.

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