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Dynamically Modulating the Surface Plasmon Resonance of Doped Semiconductor Nanocrystals

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† The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
§ ‡Department of Mechanical Engineering and §Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
⊥ ∥Plasma Applications Group and ⊥Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
E-mail: [email protected]
Cite this: Nano Lett. 2011, 11, 10, 4415–4420
Publication Date (Web):August 22, 2011
https://doi.org/10.1021/nl202597n
Copyright © 2011 American Chemical Society
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    Abstract

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    Localized surface plasmon absorption features arise at high doping levels in semiconductor nanocrystals, appearing in the near-infrared range. Here we show that the surface plasmons of tin-doped indium oxide nanocrystal films can be dynamically and reversibly tuned by postsynthetic electrochemical modulation of the electron concentration. Without ion intercalation and the associated material degradation, we induce a > 1200 nm shift in the plasmon wavelength and a factor of nearly three change in the carrier density.

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    Materials and methods, description of Drude modeling, Figures S1–S12, and Tables S1 and S2. This material is available free of charge via the Internet at http://pubs.acs.org.

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