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Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole

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    Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole
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    † †Department of Chemical Engineering, ‡Department of Materials Science and Engineering, and §Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
    ∥ San Jose Research Institute, Electronic Materials Research Center, Samsung Cheil Industries Inc., 2186 Bering Drive, San Jose, California 95131, United States
    ⊥ Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
    # Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
    *E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2013, 13, 5, 1890–1897
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    https://doi.org/10.1021/nl303410g
    Published March 28, 2013
    Copyright © 2013 American Chemical Society
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    Abstract

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    Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated a complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices.

    Copyright © 2013 American Chemical Society

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    Details of experimental procedures, synthetic route for o-MeO-DMBI, comparison of as-transferred and doped CVD graphene including Raman spectra and transistor performance. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cite this: Nano Lett. 2013, 13, 5, 1890–1897
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    https://doi.org/10.1021/nl303410g
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