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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2014, 14, 3, 1515-1519
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    Valley Splitting in a Silicon Quantum Device Platform
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    † Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark
    ‡ Centre for Quantum Computation and Communication Technology, School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
    § Nanochemistry Research Institute, Curtin University, P.O. Box U1987, Perth WA 6845
    ∥ Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway
    ⊥ Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
    *E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2014, 14, 3, 1515–1519
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    https://doi.org/10.1021/nl404738j
    Published February 26, 2014
    Copyright © 2014 American Chemical Society
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    Abstract

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    By suppressing an undesirable surface Umklapp process, it is possible to resolve the two most occupied states (1Γ and 2Γ) in a buried two-dimensional electron gas (2DEG) in silicon. The 2DEG exists because of an atomically sharp profile of phosphorus dopants which have been formed beneath the Si(001) surface (a δ-layer). The energy separation, or valley splitting, of the two most occupied bands has critical implications for the properties of δ-layer derived devices, yet until now, has not been directly measurable. Density functional theory (DFT) allows the 2DEG band structure to be calculated, but without experimental verification the size of the valley splitting has been unclear. Using a combination of direct spectroscopic measurements and DFT we show that the measured band structure is in good qualitative agreement with calculations and reveal a valley splitting of 132 ± 5 meV. We also report the effective mass and occupation of the 2DEG states and compare the dispersions and Fermi surface with DFT.

    Copyright © 2014 American Chemical Society

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    Supporting Information

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    This contains a further description of the relevant Umklapp processes, and the implication for photoemission from bulk states. Further details of the DFT calculation including the “unfolding” and the implications of dopant ordering on the calculated Fermi surface and valley splitting. A discussion of the absence of the bulk CBM and its position relative to the δ-layer states is also presented. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cited By

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    This article is cited by 18 publications.

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    Nano Letters

    Cite this: Nano Lett. 2014, 14, 3, 1515–1519
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl404738j
    Published February 26, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

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