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Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2014, 14, 12, 7100-7106
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    Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes
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    † ‡ § †Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, ‡Heeger Center for Advanced Materials (HCAM), and §Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea
    ∥ Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
    ⊥ Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
    *E-mail: (K.L.) [email protected]
    *E-mail: (S.O.K.) [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2014, 14, 12, 7100–7106
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    https://doi.org/10.1021/nl503574h
    Published November 5, 2014
    Copyright © 2014 American Chemical Society
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    Abstract

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    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μFET) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm2 V–1 s–1, which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

    Copyright © 2014 American Chemical Society

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    Supporting Information

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    Detailed experimental procedures; additional results from FET, TEM, and GIWAXS characterizations; UPS spectra of CNTs; optical microscopy images of P3HT/CNT composite films; molecular structures of semiconducting polymers used for the flexible devices; and detailed discussion about charge-injection at source contacts and transport properties of P3HT/CNT composites in FETs. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Nano Letters

    Cite this: Nano Lett. 2014, 14, 12, 7100–7106
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl503574h
    Published November 5, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

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