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Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

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    Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
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    † Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
    ‡ Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
    § Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
    *Address correspondence to [email protected]
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    Cite this: ACS Nano 2013, 7, 5, 3905–3911
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    https://doi.org/10.1021/nn305301b
    Published April 16, 2013
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    Abstract

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    Few-layered MoS2 as Schottky metal–semiconductor–metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ∼1010 cm Hz1/2/W), fast photoresponse (rise time of ∼70 μs and fall time of ∼110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (∼10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

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    Cite this: ACS Nano 2013, 7, 5, 3905–3911
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