Robust Graphene Membranes in a Silicon Carbide FrameClick to copy article linkArticle link copied!
- Daniel Waldmann
- Benjamin Butz
- Sebastian Bauer
- Jan M. Englert
- Johannes Jobst
- Konrad Ullmann
- Felix Fromm
- Maximilian Ammon
- Michael Enzelberger
- Andreas Hirsch
- Sabine Maier
- Patrik Schmuki
- Thomas Seyller
- Erdmann Spiecker
- Heiko B. Weber
Abstract

We present a fabrication process for freely suspended membranes consisting of bi- and trilayer graphene grown on silicon carbide. The procedure, involving photoelectrochemical etching, enables the simultaneous fabrication of hundreds of arbitrarily shaped membranes with an area up to 500 μm2 and a yield of around 90%. Micro-Raman and atomic force microscopy measurements confirm that the graphene layer withstands the electrochemical etching and show that the membranes are virtually unstrained. The process delivers membranes with a cleanliness suited for high-resolution transmission electron microscopy (HRTEM) at atomic scale. The membrane, and its frame, is very robust with respect to thermal cycling above 1000 °C as well as harsh acidic or alkaline treatment.
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