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Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

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† Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
‡ Samsung-SKKU Graphene Center (SSGC), Suwon, 440-746, Korea
§ School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea
⊥ Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 305-700, Korea
∥ Department of Physics, Columbia University, New York, New York 10027, United States
Department of Chemistry, Columbia University, New York, New York 10027, United States
# SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea
△ National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
*Address correspondence to [email protected], [email protected]
Cite this: ACS Nano 2013, 7, 9, 7931–7936
Publication Date (Web):August 8, 2013
https://doi.org/10.1021/nn402954e
Copyright © 2013 American Chemical Society
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Abstract

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Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical “stacking” to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

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