ACS Publications. Most Trusted. Most Cited. Most Read
My Activity
Recently Viewed
You have not visited any articles yet, Please visit some articles to see contents here.
CONTENT TYPES

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

View Author Information
Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
Samsung-SKKU Graphene Center (SSGC), Suwon, 440-746, Korea
§ School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea
Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 305-700, Korea
Department of Physics, Columbia University, New York, New York 10027, United States
Department of Chemistry, Columbia University, New York, New York 10027, United States
# SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea
National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
*Address correspondence to [email protected], [email protected]
Cite this: ACS Nano 2013, 7, 9, 7931–7936
Publication Date (Web):August 8, 2013
https://doi.org/10.1021/nn402954e
Copyright © 2013 American Chemical Society
Article Views
20305
Altmetric
-
Citations
LEARN ABOUT THESE METRICS
Read OnlinePDF (3 MB)
Supporting Info (1)»

Abstract

Abstract Image

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical “stacking” to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

Supporting Information

ARTICLE SECTIONS
Jump To

Additional figures. This material is available free of charge via the Internet at http://pubs.acs.org.

Terms & Conditions

Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Cited By


This article is cited by 810 publications.

  1. Han Lin, Zhenfang Zhang, Huihui Zhang, Keng-Te Lin, Xiaoming Wen, Yao Liang, Yang Fu, Alan Kin Tak Lau, Tianyi Ma, Cheng-Wei Qiu, Baohua Jia. Engineering van der Waals Materials for Advanced Metaphotonics. Chemical Reviews 2022, Article ASAP.
  2. Sukhwinder Singh, Jyotirmoy Deb, Suresh Kumar, Utpal Sarkar, Sandeep Sharma. Selective N,N-Dimethylformamide Vapor Sensing Using MoSe2/Multiwalled Carbon Nanotube Composites at Room Temperature. ACS Applied Nano Materials 2022, 5 (3) , 3913-3924. https://doi.org/10.1021/acsanm.1c04505
  3. Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, Yuan Liu, Yang Xu, Bin Yu, Xiangfeng Duan. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chemical Reviews 2022, 122 (6) , 6514-6613. https://doi.org/10.1021/acs.chemrev.1c00735
  4. Jonas Haas, Finn Ulrich, Christoph Hofer, Xiao Wang, Kai Braun, Jannik C. Meyer. Aligned Stacking of Nanopatterned 2D Materials for High-Resolution 3D Device Fabrication. ACS Nano 2022, 16 (2) , 1836-1846. https://doi.org/10.1021/acsnano.1c09122
  5. Pengcheng Zhang, Yueyang Jia, Maosong Xie, Zuheng Liu, Sheng Shen, Jianyong Wei, Rui Yang. Strain-Modulated Dissipation in Two-Dimensional Molybdenum Disulfide Nanoelectromechanical Resonators. ACS Nano 2022, 16 (2) , 2261-2270. https://doi.org/10.1021/acsnano.1c08380
  6. Mohammad Jafar Molaei, Mohammad Younas, Mashallah Rezakazemi. A Comprehensive Review on Recent Advances in Two-Dimensional (2D) Hexagonal Boron Nitride. ACS Applied Electronic Materials 2021, 3 (12) , 5165-5187. https://doi.org/10.1021/acsaelm.1c00720
  7. Bin Zou, Shuilai Qiu, Ziyan Qian, Jingwen Wang, Yifan Zhou, Zhoumei Xu, Wenhao Yang, Weiyi Xing. Phosphorus/Nitrogen-Codoped Molybdenum Disulfide/Cobalt Borate Nanostructures for Flame-Retardant and Tribological Applications. ACS Applied Nano Materials 2021, 4 (10) , 10495-10504. https://doi.org/10.1021/acsanm.1c01999
  8. Nolan Lassaline, Deepankur Thureja, Thibault Chervy, Daniel Petter, Puneet A. Murthy, Armin W. Knoll, David J. Norris. Freeform Electronic and Photonic Landscapes in Hexagonal Boron Nitride. Nano Letters 2021, 21 (19) , 8175-8181. https://doi.org/10.1021/acs.nanolett.1c02625
  9. Shiqi Yin, Weitao Zhang, Chaoyang Tan, Lijie Chen, Jiawang Chen, Gang Li, Hanlin Zhang, Yu Zhang, Weike Wang, Liang Li. Thermal Conductivity of Few-Layer PtS2 and PtSe2 Obtained from Optothermal Raman Spectroscopy. The Journal of Physical Chemistry C 2021, 125 (29) , 16129-16135. https://doi.org/10.1021/acs.jpcc.1c02522
  10. Yanwei He, Yuan Li, Miguel Isarraraz, Pedro Pena, Jason Tran, Long Xu, Hao Tian, Tianchen Yang, Peng Wei, Cengiz S. Ozkan, Mihrimah Ozkan, Jianlin Liu. Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films. ACS Applied Nano Materials 2021, 4 (6) , 5685-5695. https://doi.org/10.1021/acsanm.1c00298
  11. Xuedong Gao, Cui Yu, Zezhao He, Jianchao Guo, Qingbin Liu, Chuangjie Zhou, Shujun Cai, Zhihong Feng. Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors. ACS Applied Nano Materials 2021, 4 (6) , 5677-5684. https://doi.org/10.1021/acsanm.1c00028
  12. Kraig Andrews, Upendra Rijal, Arthur Bowman, Hsun-Jen Chuang, Michael R. Koehler, Jiaqiang Yan, David G. Mandrus, Pai-Yen Chen, Zhixian Zhou. Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors. ACS Applied Nano Materials 2021, 4 (5) , 5598-5610. https://doi.org/10.1021/acsanm.1c01138
  13. Yuying Wu, Cen-Feng Fu, Qiang Huang, Pengpeng Zhang, Peng Cui, Jin Ran, Jinlong Yang, Tongwen Xu. 2D Heterostructured Nanofluidic Channels for Enhanced Desalination Performance of Graphene Oxide Membranes. ACS Nano 2021, 15 (4) , 7586-7595. https://doi.org/10.1021/acsnano.1c01105
  14. Yu Ding, Yu-Shen Liu, Guofeng Yang, Yan Gu, Qigao Fan, Naiyan Lu, Huiqin Zhao, Yingzhou Yu, Xiumei Zhang, Xinxia Huo, Guoqing Chen. High-Performance Ballistic Quantum Transport of Sub-10 nm Monolayer GeS Field-Effect Transistors. ACS Applied Electronic Materials 2021, 3 (3) , 1151-1161. https://doi.org/10.1021/acsaelm.0c01019
  15. Lily J. Stanley, Hsun-Jen Chuang, Zhixian Zhou, Michael R. Koehler, Jiaqiang Yan, David G. Mandrus, Dragana Popović. Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition. ACS Applied Materials & Interfaces 2021, 13 (8) , 10594-10602. https://doi.org/10.1021/acsami.0c21440
  16. Kookjin Lee, Yeonsu Kim, Doyoon Kim, Jaewoo Lee, Hyebin Lee, Min-Kyu Joo, Young-Hoon Cho, Jinwoo Shin, Hyunjin Ji, Gyu-Tae Kim. Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection. ACS Applied Materials & Interfaces 2021, 13 (2) , 2829-2835. https://doi.org/10.1021/acsami.0c18319
  17. M. Abir Hossain, Jaehyung Yu, Arend M. van der Zande. Realizing Optoelectronic Devices from Crumpled Two-Dimensional Material Heterostructures. ACS Applied Materials & Interfaces 2020, 12 (43) , 48910-48916. https://doi.org/10.1021/acsami.0c10787
  18. Yuki Uchida, Kenji Kawahara, Satoru Fukamachi, Hiroki Ago. Chemical Vapor Deposition Growth of Uniform Multilayer Hexagonal Boron Nitride Driven by Structural Transformation of a Metal Thin Film. ACS Applied Electronic Materials 2020, 2 (10) , 3270-3278. https://doi.org/10.1021/acsaelm.0c00601
  19. Samuel Berweger, Hanyu Zhang, Prasana K. Sahoo, Benjamin M. Kupp, Jeffrey L. Blackburn, Elisa M. Miller, Thomas M. Wallis, Dmitri V. Voronine, Pavel Kabos, Sanjini U. Nanayakkara. Spatially Resolved Persistent Photoconductivity in MoS2–WS2 Lateral Heterostructures. ACS Nano 2020, 14 (10) , 14080-14090. https://doi.org/10.1021/acsnano.0c06745
  20. Yuyu Su, Dan Liu, Guoliang Yang, Qi Han, Yijun Qian, Yuchen Liu, Lifeng Wang, Joselito M. Razal, Weiwei Lei. Transition Metal Dichalcogenide (TMD) Membranes with Ultrasmall Nanosheets for Ultrafast Molecule Separation. ACS Applied Materials & Interfaces 2020, 12 (40) , 45453-45459. https://doi.org/10.1021/acsami.0c10653
  21. Soyeong Kwon, Seong-Yeon Lee, Soo Ho Choi, Jang-Won Kang, Taejin Lee, Jungeun Song, Sang Wook Lee, Chang-Hee Cho, Ki Kang Kim, Ki-Ju Yee, Dong-Wook Kim. Polarization-Dependent Light Emission and Charge Creation in MoS2 Monolayers on Plasmonic Au Nanogratings. ACS Applied Materials & Interfaces 2020, 12 (39) , 44088-44093. https://doi.org/10.1021/acsami.0c13436
  22. Niting Zeng, Yi-Chi Wang, Joseph Neilson, Simon M. Fairclough, Yichao Zou, Andrew G. Thomas, Robert J. Cernik, Sarah J. Haigh, David J. Lewis. Rapid and Low-Temperature Molecular Precursor Approach toward Ternary Layered Metal Chalcogenides and Oxides: Mo1–xWxS2 and Mo1–xWxO3 Alloys (0 ≤ x ≤ 1). Chemistry of Materials 2020, 32 (18) , 7895-7907. https://doi.org/10.1021/acs.chemmater.0c02685
  23. Yebin Kang, Dohyeon Jeon, Taekyeong Kim. Direct Observation of the Thickness-Dependent Dielectric Response of MoS2 and WSe2. The Journal of Physical Chemistry C 2020, 124 (33) , 18316-18320. https://doi.org/10.1021/acs.jpcc.0c04438
  24. Dohyeon Jeon, Yebin Kang, Taekyeong Kim. Observing the Layer-Number-Dependent Local Dielectric Response of WSe2 by Electrostatic Force Microscopy. The Journal of Physical Chemistry Letters 2020, 11 (16) , 6684-6690. https://doi.org/10.1021/acs.jpclett.0c01521
  25. Yanwei He, Hao Tian, Protik Das, Zhenjun Cui, Pedro Pena, Ivan Chiang, Wenhao Shi, Long Xu, Yuan Li, Tianchen Yang, Miguel Isarraraz, Cengiz S. Ozkan, Mihrimah Ozkan, Roger K. Lake, Jianlin Liu. Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices. ACS Applied Materials & Interfaces 2020, 12 (31) , 35318-35327. https://doi.org/10.1021/acsami.0c07201
  26. He Tian, Xiancheng Meng, Juehan Yang, Chao Fan, Shuo Yuan, Xia An, Chun Sun, Yonghui Zhang, Mengjun Wang, Hongxing Zheng, Zhongming Wei, Erping Li. Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 p–n and SnSe2/SnS2 n–n Nanoflakes. ACS Applied Nano Materials 2020, 3 (7) , 6847-6854. https://doi.org/10.1021/acsanm.0c01213
  27. Wenzhao Wang, Xiangbin Zeng, Jamie H. Warner, Zhengyu Guo, Yishuo Hu, Yang Zeng, Jingjing Lu, Wen Jin, Shibo Wang, Jichang Lu, Yirong Zeng, Yonghong Xiao. Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/[email protected] Structure. ACS Applied Materials & Interfaces 2020, 12 (29) , 33325-33335. https://doi.org/10.1021/acsami.0c04048
  28. Eunho Lee, Seung Goo Lee, Wi Hyoung Lee, Hyo Chan Lee, Nguyen Ngan Nguyen, Min Seok Yoo, Kilwon Cho. Direct CVD Growth of a Graphene/MoS2 Heterostructure with Interfacial Bonding for Two-Dimensional Electronics. Chemistry of Materials 2020, 32 (11) , 4544-4552. https://doi.org/10.1021/acs.chemmater.0c00503
  29. Yan Lei, Jie Luo, Xiaogang Yang, Tuo Cai, Ruijuan Qi, Longyan Gu, Zhi Zheng. Thermal Evaporation of Large-Area SnS2 Thin Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector Applications. ACS Applied Materials & Interfaces 2020, 12 (22) , 24940-24950. https://doi.org/10.1021/acsami.0c01781
  30. Mina Maruyama, Kosuke Nagashio, Susumu Okada. Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS2. ACS Applied Electronic Materials 2020, 2 (5) , 1352-1357. https://doi.org/10.1021/acsaelm.0c00139
  31. Madan Sharma, Aditya Singh, Rajendra Singh. Monolayer MoS2 Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics. ACS Applied Nano Materials 2020, 3 (5) , 4445-4453. https://doi.org/10.1021/acsanm.0c00551
  32. Qingyi Li, Laizhi Sui, Guangming Niu, Jutao Jiang, Yutong Zhang, Guorong Wu, Mingxing Jin, Kaijun Yuan. Pressure Manipulation of Interlayer Interactions and Ultrafast Carrier Dynamics in Few-Layer MoS2. The Journal of Physical Chemistry C 2020, 124 (20) , 11183-11192. https://doi.org/10.1021/acs.jpcc.0c01869
  33. Kailiang Huang, Miao Zhao, Bing Sun, Xueyuan Liu, Jianhua Liu, Hudong Chang, Yuping Zeng, Honggang Liu. Transition from Hopping to Band-like Transport in Weakly Coupled Multilayer MoS2 Field Effect Transistors. ACS Applied Electronic Materials 2020, 2 (4) , 971-979. https://doi.org/10.1021/acsaelm.0c00046
  34. Kuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen, Shih-Yen Lin. Van der Waals Epitaxy of Large-Area and Single-Crystalline Gold Films on MoS2 for Low-Contact-Resistance 2D–3D Interfaces. ACS Applied Nano Materials 2020, 3 (3) , 2997-3003. https://doi.org/10.1021/acsanm.0c00262
  35. Kathleen M. McCreary, Enrique D. Cobas, Aubrey T. Hanbicki, Matthew R. Rosenberger, Hsun-Jen Chuang, Saujan V. Sivaram, Vladimir P. Oleshko, Berend T. Jonker. Synthesis of High-Quality Monolayer MoS2 by Direct Liquid Injection. ACS Applied Materials & Interfaces 2020, 12 (8) , 9580-9588. https://doi.org/10.1021/acsami.9b19561
  36. SunPhil Kim, Emil Annevelink, Edmund Han, Jaehyung Yu, Pinshane Y. Huang, Elif Ertekin, Arend M. van der Zande. Stochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals Interfaces. Nano Letters 2020, 20 (2) , 1201-1207. https://doi.org/10.1021/acs.nanolett.9b04619
  37. Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, Sung-Yool Choi. Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display. ACS Applied Materials & Interfaces 2020, 12 (4) , 4749-4754. https://doi.org/10.1021/acsami.9b18945
  38. Gwang Hyuk Shin, Geon-Beom Lee, Eun-Su An, Cheolmin Park, Hyeok Jun Jin, Khang June Lee, Dong Sik Oh, Jun Sung Kim, Yang-Kyu Choi, Sung-Yool Choi. High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure. ACS Applied Materials & Interfaces 2020, 12 (4) , 5106-5112. https://doi.org/10.1021/acsami.9b20077
  39. Sang-Soo Chee, Joo-Hyoung Lee, Kayoung Lee, Moon-Ho Ham. Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer. ACS Applied Materials & Interfaces 2020, 12 (3) , 4129-4134. https://doi.org/10.1021/acsami.9b19681
  40. Jung Joon Pyeon, In-Hwan Baek, Woo Chul Lee, Hansol Lee, Sung Ok Won, Ga-Yeon Lee, Taek-Mo Chung, Jeong Hwan Han, Seung-Hyub Baek, Jin-Sang Kim, Ji-Won Choi, Chong-Yun Kang, Seong Keun Kim. Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics. ACS Applied Materials & Interfaces 2020, 12 (2) , 2679-2686. https://doi.org/10.1021/acsami.9b19471
  41. Si-Yuan Zhang, Kang Xu, Xiao-Kang Zhao, Zhi-Yong Shao, Neng Wan. Improved hBN Single-Crystal Growth by Adding Carbon in the Metal Flux. Crystal Growth & Design 2019, 19 (11) , 6252-6257. https://doi.org/10.1021/acs.cgd.9b00712
  42. Seongchan Kim, Young Chan Kim, Young Jin Choi, Hwi Je Woo, Young Jae Song, Moon Sung Kang, Changgu Lee, Jeong Ho Cho. Vertically Stacked CVD-Grown 2D Heterostructure for Wafer-Scale Electronics. ACS Applied Materials & Interfaces 2019, 11 (38) , 35444-35450. https://doi.org/10.1021/acsami.9b11206
  43. Kyungjune Cho, Jinsu Pak, Seungjun Chung, Takhee Lee. Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers. ACS Nano 2019, 13 (9) , 9713-9734. https://doi.org/10.1021/acsnano.9b02540
  44. Mingxing Li, Jia-Shiang Chen, Mircea Cotlet. Light-Induced Interfacial Phenomena in Atomically Thin 2D van der Waals Material Hybrids and Heterojunctions. ACS Energy Letters 2019, 4 (9) , 2323-2335. https://doi.org/10.1021/acsenergylett.9b01399
  45. Yi Wen, Colin Ophus, Christopher S. Allen, Shiang Fang, Jun Chen, Efthimios Kaxiras, Angus I. Kirkland, Jamie H. Warner. Simultaneous Identification of Low and High Atomic Number Atoms in Monolayer 2D Materials Using 4D Scanning Transmission Electron Microscopy. Nano Letters 2019, 19 (9) , 6482-6491. https://doi.org/10.1021/acs.nanolett.9b02717
  46. Mäx Blauth, Gwenaëlle Vest, Shobin Loukkose Rosemary, Maximilian Prechtl, Oliver Hartwig, Marius Jürgensen, Michael Kaniber, Andreas V. Stier, Jonathan J. Finley. Ultracompact Photodetection in Atomically Thin MoSe2. ACS Photonics 2019, 6 (8) , 1902-1909. https://doi.org/10.1021/acsphotonics.9b00785
  47. Zhihui Cheng, Yifei Yu, Shreya Singh, Katherine Price, Steven G. Noyce, Yuh-Chen Lin, Linyou Cao, Aaron D. Franklin. Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts. Nano Letters 2019, 19 (8) , 5077-5085. https://doi.org/10.1021/acs.nanolett.9b01355
  48. Min-Woo Kim, Max L. Lifson, Gallivan A. Rebecca, Julia R. Greer, Bong-Joong Kim. Recoverable Electrical Breakdown Strength and Dielectric Constant in Ultralow-k Nanolattice Capacitors. Nano Letters 2019, 19 (8) , 5689-5696. https://doi.org/10.1021/acs.nanolett.9b02282
  49. Veronika Brune, Corinna Hegemann, Sanjay Mathur. Molecular Routes to Two-Dimensional Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se). Inorganic Chemistry 2019, 58 (15) , 9922-9934. https://doi.org/10.1021/acs.inorgchem.9b01084
  50. Ilmin Lee, Won Tae Kang, Yong Seon Shin, Young Rae Kim, Ui Yeon Won, Kunnyun Kim, Dinh Loc Duong, Kiyoung Lee, Jinseong Heo, Young Hee Lee, Woo Jong Yu. Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier. ACS Nano 2019, 13 (7) , 8392-8400. https://doi.org/10.1021/acsnano.9b03993
  51. Jeongwoo Park, Dohyeon Jeon, Yebin Kang, Young-Jun Yu, Taekyeong Kim. Direct Mapping of the Gate Response of a Multilayer WSe2/MoS2 Heterostructure with Locally Different Degrees of Charge Depletion. The Journal of Physical Chemistry Letters 2019, 10 (14) , 4010-4016. https://doi.org/10.1021/acs.jpclett.9b01192
  52. Sung Hyun Kim, Sum-Gyun Yi, Myung Uk Park, ChangJun Lee, Myeongjin Kim, Kyung-Hwa Yoo. Multilevel MoS2 Optical Memory with Photoresponsive Top Floating Gates. ACS Applied Materials & Interfaces 2019, 11 (28) , 25306-25312. https://doi.org/10.1021/acsami.9b05491
  53. Ruilong Yang, Lixuan Liu, Shanghuai Feng, Yujie Liu, Songlin Li, Kun Zhai, Jianyong Xiang, Congpu Mu, Anmin Nie, Fusheng Wen, Bochong Wang, Guangyu Zhang, Yongji Gong, Zhisheng Zhao, Yongjun Tian, Zhongyuan Liu. One-Step Growth of Spatially Graded Mo1–xWxS2 Monolayers with a Wide Span in Composition (from x = 0 to 1) at a Large Scale. ACS Applied Materials & Interfaces 2019, 11 (23) , 20979-20986. https://doi.org/10.1021/acsami.9b03608
  54. Renjing Xu, Houk Jang, Min-Hyun Lee, Dovran Amanov, Yeonchoo Cho, Haeryong Kim, Seongjun Park, Hyeon-jin Shin, Donhee Ham. Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV. Nano Letters 2019, 19 (4) , 2411-2417. https://doi.org/10.1021/acs.nanolett.8b05140
  55. Youngchan Kim, Hunyoung Bark, Byunggil Kang, Changgu Lee. Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices. ACS Applied Materials & Interfaces 2019, 11 (13) , 12613-12621. https://doi.org/10.1021/acsami.8b20714
  56. Eric Singh, Pragya Singh, Ki Seok Kim, Geun Young Yeom, Hari Singh Nalwa. Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics. ACS Applied Materials & Interfaces 2019, 11 (12) , 11061-11105. https://doi.org/10.1021/acsami.8b19859
  57. Hannah M. Gramling, Clarissa M. Towle, Sujay B. Desai, Haoye Sun, Evan C. Lewis, Vu D. Nguyen, Joel W. Ager, Daryl Chrzan, Eric M. Yeatman, Ali Javey, Hayden Taylor. Spatially Precise Transfer of Patterned Monolayer WS2 and MoS2 with Features Larger than 104 μm2 Directly from Multilayer Sources. ACS Applied Electronic Materials 2019, 1 (3) , 407-416. https://doi.org/10.1021/acsaelm.8b00128
  58. Xue-Feng Wang, He Tian, Yanming Liu, Shuhong Shen, Zhaoyi Yan, Ningqin Deng, Yi Yang, Tian-Ling Ren. Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio. ACS Nano 2019, 13 (2) , 2205-2212. https://doi.org/10.1021/acsnano.8b08876
  59. Peiyu Chen, Wenshuo Xu, Yakun Gao, Philip Holdway, Jamie H. Warner, Martin R. Castell. Thermal Degradation of Monolayer MoS2 on SrTiO3 Supports. The Journal of Physical Chemistry C 2019, 123 (6) , 3876-3885. https://doi.org/10.1021/acs.jpcc.8b11298
  60. Zehua Jin, Fan Ye, Xiang Zhang, Shuai Jia, Liangliang Dong, Sidong Lei, Robert Vajtai, Jacob T. Robinson, Jun Lou, Pulickel M. Ajayan. Near-Field Coupled Integrable Two-Dimensional InSe Photosensor on Optical Fiber. ACS Nano 2018, 12 (12) , 12571-12577. https://doi.org/10.1021/acsnano.8b07159
  61. Tianqi Liu, Kasun Premasiri, Yongkun Sui, Xun Zhan, Haithem A. B. Mustafa, Ozan Akkus, Christian A. Zorman, Xuan P. A. Gao, R. Mohan Sankaran. Direct, Transfer-Free Growth of Large-Area Hexagonal Boron Nitride Films by Plasma-Enhanced Chemical Film Conversion (PECFC) of Printable, Solution-Processed Ammonia Borane. ACS Applied Materials & Interfaces 2018, 10 (50) , 43936-43945. https://doi.org/10.1021/acsami.8b17152
  62. Derek C. Popple, Elyse A. Schriber, Matthew Yeung, J. Nathan Hohman. Competing Roles of Crystallization and Degradation of a Metal–Organic Chalcogenolate Assembly under Biphasic Solvothermal Conditions. Langmuir 2018, 34 (47) , 14265-14273. https://doi.org/10.1021/acs.langmuir.8b03282
  63. Martin E. P. Tweedie, Yuewen Sheng, Syed Ghazi Sarwat, Wenshuo Xu, Harish Bhaskaran, Jamie H. Warner. Inhomogeneous Strain Release during Bending of WS2 on Flexible Substrates. ACS Applied Materials & Interfaces 2018, 10 (45) , 39177-39186. https://doi.org/10.1021/acsami.8b12707
  64. Kenshiro Suenaga, Hyun Goo Ji, Yung-Chang Lin, Tom Vincent, Mina Maruyama, Adha Sukma Aji, Yoshihiro Shiratsuchi, Dong Ding, Kenji Kawahara, Susumu Okada, Vishal Panchal, Olga Kazakova, Hiroki Hibino, Kazu Suenaga, Hiroki Ago. Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire. ACS Nano 2018, 12 (10) , 10032-10044. https://doi.org/10.1021/acsnano.8b04612
  65. Hyeon Jung Park, Cheol-Joon Park, Jun Young Kim, Min Su Kim, Jeongyong Kim, Jinsoo Joo. Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor. ACS Applied Materials & Interfaces 2018, 10 (38) , 32556-32566. https://doi.org/10.1021/acsami.8b10525
  66. Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Jihyun Kim. Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics. ACS Applied Materials & Interfaces 2018, 10 (35) , 29724-29729. https://doi.org/10.1021/acsami.8b07030
  67. L. Cabral, Fernando P. Sabino, Matheus P. Lima, G. E. Marques, Victor Lopez-Richard, Juarez L. F. Da Silva. Azobenzene Adsorption on the MoS2(0001) Surface: A Density Functional Investigation within van der Waals Corrections. The Journal of Physical Chemistry C 2018, 122 (33) , 18895-18901. https://doi.org/10.1021/acs.jpcc.8b03068
  68. Andrea Crovetto, Patrick Rebsdorf Whelan, Ruizhi Wang, Miriam Galbiati, Stephan Hofmann, Luca Camilli. Nondestructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer. ACS Applied Materials & Interfaces 2018, 10 (30) , 25804-25810. https://doi.org/10.1021/acsami.8b08609
  69. Jinsu Pak, Yeonsik Jang, Junghwan Byun, Kyungjune Cho, Tae-Young Kim, Jae-Keun Kim, Barbara Yuri Choi, Jiwon Shin, Yongtaek Hong, Seungjun Chung, Takhee Lee. Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields. ACS Nano 2018, 12 (7) , 7109-7116. https://doi.org/10.1021/acsnano.8b02925
  70. Sukgyun Cha, Changsoon Kim. Poly(dimethylsiloxane) Stamp Coated with a Low-Surface-Energy, Diffusion-Blocking, Covalently Bonded Perfluoropolyether Layer and Its Application to the Fabrication of Organic Electronic Devices by Layer Transfer. ACS Applied Materials & Interfaces 2018, 10 (28) , 24003-24012. https://doi.org/10.1021/acsami.8b03811
  71. Mengqi Zeng, Yao Xiao, Jinxin Liu, Kena Yang, Lei Fu. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control. Chemical Reviews 2018, 118 (13) , 6236-6296. https://doi.org/10.1021/acs.chemrev.7b00633
  72. Huanyu Jin, Chunxian Guo, Xin Liu, Jinlong Liu, Anthony Vasileff, Yan Jiao, Yao Zheng, Shi-Zhang Qiao. Emerging Two-Dimensional Nanomaterials for Electrocatalysis. Chemical Reviews 2018, 118 (13) , 6337-6408. https://doi.org/10.1021/acs.chemrev.7b00689
  73. Kirby K. H. Smithe, Chris D. English, Saurabh V. Suryavanshi, Eric Pop. High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2. Nano Letters 2018, 18 (7) , 4516-4522. https://doi.org/10.1021/acs.nanolett.8b01692
  74. Yangyang Wang, Ruixiang Fei, Ruge Quhe, Jingzhen Li, Han Zhang, Xiuying Zhang, Bowen Shi, Lin Xiao, Zhigang Song, Jinbo Yang, Junjie Shi, Feng Pan, Jing Lu. Many-Body Effect and Device Performance Limit of Monolayer InSe. ACS Applied Materials & Interfaces 2018, 10 (27) , 23344-23352. https://doi.org/10.1021/acsami.8b06427
  75. Bernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, Theresia Knobloch, Peng Wu, Michael Waltl, Alexander Grill, Joerg Appenzeller, Tibor Grasser. Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano 2018, 12 (6) , 5368-5375. https://doi.org/10.1021/acsnano.8b00268
  76. Yuki Uchida, Sho Nakandakari, Kenji Kawahara, Shigeto Yamasaki, Masatoshi Mitsuhara, Hiroki Ago. Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate. ACS Nano 2018, 12 (6) , 6236-6244. https://doi.org/10.1021/acsnano.8b03055
  77. Kyunghee Choi, Kimoon Lee, Sanghyuck Yu, Sehoon Oh, Hyoung Joon Choi, Heesun Bae, Seongil Im. Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy. ACS Applied Materials & Interfaces 2018, 10 (24) , 20213-20218. https://doi.org/10.1021/acsami.8b04056
  78. Binghao Wang, Wei Huang, Lifeng Chi, Mohammed Al-Hashimi, Tobin J. Marks, Antonio Facchetti. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chemical Reviews 2018, 118 (11) , 5690-5754. https://doi.org/10.1021/acs.chemrev.8b00045
  79. Yibo Zhu, Yijun Li, Ghidewon Arefe, Robert A. Burke, Cheng Tan, Yufeng Hao, Xiaochi Liu, Xue Liu, Won Jong Yoo, Madan Dubey, Qiao Lin, James C. Hone. Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates. Nano Letters 2018, 18 (6) , 3807-3813. https://doi.org/10.1021/acs.nanolett.8b01091
  80. Honglai Li, Hongjun Liu, Linwei Zhou, Xueping Wu, Yuhao Pan, Wei Ji, Biyuan Zheng, Qinglin Zhang, Xiujuan Zhuang, Xiaoli Zhu, Xiao Wang, Xiangfeng Duan, Anlian Pan. Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals. ACS Nano 2018, 12 (5) , 4853-4860. https://doi.org/10.1021/acsnano.8b01646
  81. Soonmin Yim, Hyeuk Jin Han, Jaebeom Jeon, Kiung Jeon, Dong Min Sim, Yeon Sik Jung. Nanopatterned High-Frequency Supporting Structures Stably Eliminate Substrate Effects Imposed on Two-Dimensional Semiconductors. Nano Letters 2018, 18 (5) , 2893-2902. https://doi.org/10.1021/acs.nanolett.8b00084
  82. Seungho Bang, Ngoc Thanh Duong, Jubok Lee, Yoo Hyun Cho, Hye Min Oh, Hyun Kim, Seok Joon Yun, Chulho Park, Min-Ki Kwon, Ja-Yeon Kim, Jeongyong Kim, Mun Seok Jeong. Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling. Nano Letters 2018, 18 (4) , 2316-2323. https://doi.org/10.1021/acs.nanolett.7b05060
  83. Geonyeop Lee, Stephen J. Pearton, Fan Ren, Jihyun Kim. Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions. ACS Applied Materials & Interfaces 2018, 10 (12) , 10347-10352. https://doi.org/10.1021/acsami.7b19334
  84. Gabriela Ben-Melech Stan, Maytal Caspary Toroker. Lateral Chemical Bonding in Two-Dimensional Transition-Metal Dichalcogenide Metal/Semiconductor Heterostructures. The Journal of Physical Chemistry C 2018, 122 (10) , 5401-5410. https://doi.org/10.1021/acs.jpcc.7b11165
  85. Tongxin Chen, Yingqiu Zhou, Yuewen Sheng, Xiaochen Wang, Si Zhou, and Jamie H. Warner . Hydrogen-Assisted Growth of Large-Area Continuous Films of MoS2 on Monolayer Graphene. ACS Applied Materials & Interfaces 2018, 10 (8) , 7304-7314. https://doi.org/10.1021/acsami.7b14860
  86. Nicholas D. Cultrara, Yaxian Wang, Maxx Q. Arguilla, Michael R. Scudder, Shishi Jiang, Wolfgang Windl, Svilen Bobev, and Joshua E. Goldberger . Synthesis of 1T, 2H, and 6R Germanane Polytypes. Chemistry of Materials 2018, 30 (4) , 1335-1343. https://doi.org/10.1021/acs.chemmater.7b04990
  87. Krishna Murali, Medha Dandu, Sarthak Das, and Kausik Majumdar . Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. ACS Applied Materials & Interfaces 2018, 10 (6) , 5657-5664. https://doi.org/10.1021/acsami.7b18242
  88. Jing-Kai Qin, Dan-Dan Ren, Wen-Zhu Shao, Yang Li, Peng Miao, Zhao-Yuan Sun, PingAn Hu, Liang Zhen, and Cheng-Yan Xu . Photoresponse Enhancement in Monolayer ReS2 Phototransistor Decorated with CdSe–CdS–ZnS Quantum Dots. ACS Applied Materials & Interfaces 2017, 9 (45) , 39456-39463. https://doi.org/10.1021/acsami.7b10349
  89. Lanlan Jiang, Yuanyuan Shi, Fei Hui, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan Uppal, Felix Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A. Villena, Xiaoming Xie, Paul C. McIntyre, and Mario Lanza . Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride. ACS Applied Materials & Interfaces 2017, 9 (45) , 39758-39770. https://doi.org/10.1021/acsami.7b10948
  90. Qiyi Zhao, Yaohui Guo, Yixuan Zhou, Xiang Xu, Zhaoyu Ren, Jintao Bai, and Xinlong Xu . Flexible and Anisotropic Properties of Monolayer MX2 (M = Tc and Re; X = S, Se). The Journal of Physical Chemistry C 2017, 121 (42) , 23744-23751. https://doi.org/10.1021/acs.jpcc.7b07939
  91. Lanxia Cheng, Jaebeom Lee, Hui Zhu, Arul Vigneswar Ravichandran, Qingxiao Wang, Antonio T. Lucero, Moon J. Kim, Robert M. Wallace, Luigi Colombo, and Jiyoung Kim . Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices. ACS Nano 2017, 11 (10) , 10243-10252. https://doi.org/10.1021/acsnano.7b04813
  92. Tae-Young Kim, Jewook Ha, Kyungjune Cho, Jinsu Pak, Jiseok Seo, Jongjang Park, Jae-Keun Kim, Seungjun Chung, Yongtaek Hong, and Takhee Lee . Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms. ACS Nano 2017, 11 (10) , 10273-10280. https://doi.org/10.1021/acsnano.7b04893
  93. Anuj Nehra, Weizao Chen, Dimiter S. Dimitrov, Anu Puri, and Krishna Pal Singh . Graphene Oxide-Polycarbonate Track-Etched Nanosieve Platform for Sensitive Detection of Human Immunodeficiency Virus Envelope Glycoprotein. ACS Applied Materials & Interfaces 2017, 9 (38) , 32621-32634. https://doi.org/10.1021/acsami.7b12103
  94. Farman Ullah, Yumin Sim, Chinh Tam Le, Maeng-Je Seong, Joon I. Jang, Sonny H. Rhim, Bien Cuong Tran Khac, Koo-Hyun Chung, Kibog Park, Yangjin Lee, Kwanpyo Kim, Hu Young Jeong, and Yong Soo Kim . Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure. ACS Nano 2017, 11 (9) , 8822-8829. https://doi.org/10.1021/acsnano.7b02914
  95. Christopher J. Brennan, Rudresh Ghosh, Kalhan Koul, Sanjay K. Banerjee, Nanshu Lu, and Edward T. Yu . Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy. Nano Letters 2017, 17 (9) , 5464-5471. https://doi.org/10.1021/acs.nanolett.7b02123
  96. Rui Yang, Jaesung Lee, Souvik Ghosh, Hao Tang, R. Mohan Sankaran, Christian A. Zorman, and Philip X.-L. Feng . Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture. Nano Letters 2017, 17 (8) , 4568-4575. https://doi.org/10.1021/acs.nanolett.7b00730
  97. Sungwook Hong, Aravind Krishnamoorthy, Pankaj Rajak, Subodh Tiwari, Masaaki Misawa, Fuyuki Shimojo, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta . Computational Synthesis of MoS2 Layers by Reactive Molecular Dynamics Simulations: Initial Sulfidation of MoO3 Surfaces. Nano Letters 2017, 17 (8) , 4866-4872. https://doi.org/10.1021/acs.nanolett.7b01727
  98. Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias Garratt, Irina Kalish, Albert V. Davydov, Ravindra K. Kanjolia, and James E. Maslar . Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition. Chemistry of Materials 2017, 29 (15) , 6279-6288. https://doi.org/10.1021/acs.chemmater.7b01367
  99. Heeseung Yang, Anupam Giri, Sungmin Moon, Sangbae Shin, Jae-Min Myoung, and Unyong Jeong . Highly Scalable Synthesis of MoS2 Thin Films with Precise Thickness Control via Polymer-Assisted Deposition. Chemistry of Materials 2017, 29 (14) , 5772-5776. https://doi.org/10.1021/acs.chemmater.7b01605
  100. Xiangzhi Li, Gabriella D. Shepard, Andrew Cupo, Nicolas Camporeale, Kamran Shayan, Yue Luo, Vincent Meunier, and Stefan Strauf . Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra. ACS Nano 2017, 11 (7) , 6652-6660. https://doi.org/10.1021/acsnano.7b00638
Load more citations

Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

You’ve supercharged your research process with ACS and Mendeley!

STEP 1:
Click to create an ACS ID

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

MENDELEY PAIRING EXPIRED
Your Mendeley pairing has expired. Please reconnect

This website uses cookies to improve your user experience. By continuing to use the site, you are accepting our use of cookies. Read the ACS privacy policy.

CONTINUE