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Determining the Electronic Confinement of a Subsurface Metallic State

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Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Nano 2014, 8, 10, 10223-10228
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    Determining the Electronic Confinement of a Subsurface Metallic State
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    † Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway
    ‡ School of Physics, Monash University, Clayton, Victoria 3800, Australia
    § Nanochemistry Research Institute, Curtin University, Perth, WA 6845 Australia
    ∥ Australian Synchrotron, Clayton, Victoria 3168, Australia
    ⊥ Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark
    # Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
    *Address correspondence to [email protected]
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    ACS Nano

    Cite this: ACS Nano 2014, 8, 10, 10223–10228
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    https://doi.org/10.1021/nn5045239
    Published September 22, 2014
    Copyright © 2014 American Chemical Society
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    Abstract

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    Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electronic profile has been lacking. Using resonantly enhanced photoemission spectroscopy, we reveal the real-space breadth of the Si:P δ-layer occupied states and gain a rare view into the nature of the confined orbitals. We find that the occupied valley-split states of the δ-layer, the so-called 1Γ and 2Γ, are exceptionally confined with an electronic profile of a mere 0.40 to 0.52 nm at full width at half-maximum, a result that is in excellent agreement with density functional theory calculations. Furthermore, the bulk-like Si 3pz orbital from which the occupied states are derived is sufficiently confined to lose most of its pz-like character, explaining the strikingly large valley splitting observed for the 1Γ and 2Γ states.

    Copyright © 2014 American Chemical Society

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    Cited By

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    This article is cited by 11 publications.

    1. Håkon I. Røst, Ezequiel Tosi, Frode S. Strand, Anna Cecilie Åsland, Paolo Lacovig, Silvano Lizzit, Justin W. Wells. Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform. ACS Applied Materials & Interfaces 2023, 15 (18) , 22637-22643. https://doi.org/10.1021/acsami.2c23011
    2. Federico Mazzola, Barun Ghosh, Jun Fujii, Gokul Acharya, Debashis Mondal, Giorgio Rossi, Arun Bansil, Daniel Farias, Jin Hu, Amit Agarwal, Antonio Politano, Ivana Vobornik. Discovery of a Magnetic Dirac System with a Large Intrinsic Nonlinear Hall Effect. Nano Letters 2023, 23 (3) , 902-907. https://doi.org/10.1021/acs.nanolett.2c04194
    3. Simon P. Cooil, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, D. Andrew Evans, Jill A. Miwa, and Justin W. Wells . In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. ACS Nano 2017, 11 (2) , 1683-1688. https://doi.org/10.1021/acsnano.6b07359
    4. Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane, Alexander Kölker, Marcel van Loon, Juerong Li, Sarah Fearn, Henric Bornemann, Nicolò D'Anna, Andrew J. Fisher, Vladimir N. Strocov, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield. Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon. Advanced Science 2023, 10 (27) https://doi.org/10.1002/advs.202302101
    5. Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski. Electronic structure of boron and aluminum δ -doped layers in silicon. Journal of Applied Physics 2023, 134 (4) https://doi.org/10.1063/5.0156832
    6. Federico Mazzola, Chin-Yi Chen, Rajib Rahman, Xie-Gang Zhu, Craig M. Polley, Thiagarajan Balasubramanian, Phil D. C. King, Philip Hofmann, Jill A. Miwa, Justin W. Wells. The sub-band structure of atomically sharp dopant profiles in silicon. npj Quantum Materials 2020, 5 (1) https://doi.org/10.1038/s41535-020-0237-1
    7. A. C. Pakpour-Tabrizi, A. K. Schenk, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J. E. Butler, A. Vikharev, J. A. Miwa, P. Hofmann, S. P. Cooil, J. W. Wells, F. Mazzola. The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances 2020, 2 (3) , 1358-1364. https://doi.org/10.1039/C9NA00593E
    8. Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan, Frode S. Strand, Thomas Nyborg, Davide Curcio, Alex K. Schenk, Simon P. Cooil, Marco Bianchi, Justin W. Wells, Philip Hofmann, Jill A. Miwa. Observation and origin of the Δ manifold in Si:P δ layers. Physical Review B 2020, 101 (12) https://doi.org/10.1103/PhysRevB.101.121402
    9. Joseph A. Hagmann, Xiqiao Wang, Pradeep Namboodiri, Jonathan Wyrick, Roy Murray, M. D. Stewart, Richard M. Silver, Curt A. Richter. High resolution thickness measurements of ultrathin Si:P monolayers using weak localization. Applied Physics Letters 2018, 112 (4) https://doi.org/10.1063/1.4998712
    10. F. Mazzola, J. W. Wells, A. C. Pakpour-Tabrizi, R. B. Jackman, B. Thiagarajan, Ph. Hofmann, J. A. Miwa. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors. Physical Review Letters 2018, 120 (4) https://doi.org/10.1103/PhysRevLett.120.046403
    11. F. Mazzola, M. Nematollahi, Z. S. Li, S. Cooil, X. Yang, T. W. Reenaas, J. W. Wells. Resonant photoemission spectroscopy for intermediate band materials. Applied Physics Letters 2015, 107 (19) https://doi.org/10.1063/1.4935536
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    ACS Nano

    Cite this: ACS Nano 2014, 8, 10, 10223–10228
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nn5045239
    Published September 22, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

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