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Epitaxial Growth of a Single-Domain Hexagonal Boron Nitride Monolayer

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Physics Department, University of Trieste, Via Valerio 2, 34127 Trieste, Italy
Elettra-Sincrotrone Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
§ National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov, Romania
CNR-Institute for Complex Systems, Via Fosso del Cavaliere 100, 00133 Roma, Italy
IOM-CNR, Laboratorio TASC, AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
*Address correspondence to [email protected]
Cite this: ACS Nano 2014, 8, 12, 12063–12070
Publication Date (Web):November 12, 2014
https://doi.org/10.1021/nn5058968
Copyright © 2014 American Chemical Society

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    Abstract

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    We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T = 1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T = 1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.

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    Fast XPS analysis of the HTG and TPG growth methods of h-BN. This material is available free of charge via the Internet at http://pubs.acs.org.

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