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Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy

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WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
§ MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest, Hungary
*Address correspondence to [email protected]
Cite this: ACS Nano 2015, 9, 3, 2989–3001
Publication Date (Web):February 17, 2015
https://doi.org/10.1021/nn507159u
Copyright © 2015 American Chemical Society
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Abstract

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Modern field-effect transistors or laser diodes take advantages of band-edge structures engineered by large uniaxial strain εzz, available up to an elasticity limit at a rate of band-gap deformation potential azz (= dEg/dεzz). However, contrary to aP values under hydrostatic pressure, there is no quantitative consensus on azz values under uniaxial tensile, compressive, and bending stress. This makes band-edge engineering inefficient. Here we propose SEM–cathodoluminescence nanospectroscopy under in situ nanomanipulation (Nanoprobe-CL). An apex of a c-axis-oriented free-standing ZnO nanorod (NR) is deflected by point-loading of bending stress, where local uniaxial strain (εcc = r/R) and its gradient across a NR (dεcc/dr = R–1) are controlled by a NR local curvature (R–1). The NR elasticity limit is evaluated sequentially (εcc = 0.04) from SEM observation of a NR bending deformation cycle. An electron beam is focused on several spots crossing a bent NR, and at each spot the local Eg is evaluated from near-band-edge CL emission energy. Uniaxial acc (= dEg/dεcc) is evaluated at regulated surface depth, and the impact of R–1 on observed acc is investigated. The acc converges with −1.7 eV to the R–1 = 0 limit, whereas it quenches with increasing R–1, which is attributed to free-exciton drift under transversal band-gap gradient. Surface-sensitive CL measurements suggest that a discrepancy from bulk acc = −4 eV may originate from strain relaxation at the side surface under uniaxial stress. The nanoprobe-CL technique reveals an Egij) response to specific strain tensor εij (i, j = x, y, z) and strain-gradient effects on a minority carrier population, enabling simulations and strain-dependent measurements of nanodevices with various structures.

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