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Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate

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† Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China
‡ Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People’s Republic of China
*E-mail: [email protected]. Phone: +86 10 8230 4529. Fax: +86 10 8230 4529.
Cite this: Cryst. Growth Des. 2015, 15, 5, 2413-2418
Publication Date (Web):March 30, 2015
https://doi.org/10.1021/acs.cgd.5b00201
Copyright © 2015 American Chemical Society
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Abstract

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We present a study of Au-free InAsSb nanowire (NW) growth on Si (111) substrate under different growth parameters including V/III ratio, group Sb flow rate fraction (Sb-FRF, TMSb/(TMSb+AsH3)), and temperature. It was found that two different kinds of growth mechanisms for the Au-free InAsSb NW growth may be dominant depending on the growth parameters. At low V/III ratio and relatively high Sb-FRF, the NWs grow via vapor–liquid–solid (VLS) mode, while at high V/III ratio and relatively low Sb-FRF, they grow via vapor–solid (VS) mode. The NWs obtained by the two growth modes show clear differences in morphology, growth direction, and crystal quality. Under VS mode, the NWs exhibit unified growth direction and a uniform composition distribution, which are beneficial to integration devices of multiple NWs. On the other hand, under VLS mode, the NWs are first reported with pure crystal phase, which will be useful for the development of single NW devices.

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This article is cited by 19 publications.

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  2. Xianghai Ji, Xiaoguang Yang, Wenna Du, Huayong Pan, and Tao Yang . Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core–Shell Nanowires. Nano Letters 2016, 16 (12) , 7580-7587. DOI: 10.1021/acs.nanolett.6b03429.
  3. M. Teng Soo, Kun Zheng, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, and Jin Zou . Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks. Nano Letters 2016, 16 (7) , 4189-4193. DOI: 10.1021/acs.nanolett.6b01064.
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  6. Giorgos Boras, Xuezhe Yu, Huiyun Liu. III–V ternary nanowires on Si substrates: growth, characterization and device applications. Journal of Semiconductors 2019, 40 (10) , 101301. DOI: 10.1088/1674-4926/40/10/101301.
  7. Deepak Anandan, Venkatesan Nagarajan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang. Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio. Journal of Crystal Growth 2019, 522, 30-36. DOI: 10.1016/j.jcrysgro.2019.06.016.
  8. Dingding Ren, Lyubomir Ahtapodov, Antonius T J van Helvoort, Helge Weman, Bjørn-Ove Fimland. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. Nanotechnology 2019, 30 (29) , 294001. DOI: 10.1088/1361-6528/ab13ed.
  9. A S Sokolovskii, M T Robson, R R LaPierre, V G Dubrovskii. Modeling selective-area growth of InAsSb nanowires. Nanotechnology 2019, 30 (28) , 285601. DOI: 10.1088/1361-6528/ab1375.
  10. SenPo Yip, Lifan Shen, Johnny C Ho. Recent advances in III-Sb nanowires: from synthesis to applications. Nanotechnology 2019, 30 (20) , 202003. DOI: 10.1088/1361-6528/aafcce.
  11. Hang Wang, Ying Wang, Shuyan Gong, Xinyuan Zhou, Zaixing Yang, Jun Yang, Ning Han, Yunfa Chen. Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram. Crystals 2019, 9 (3) , 155. DOI: 10.3390/cryst9030155.
  12. Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang. Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD. Journal of Crystal Growth 2019, 506, 45-54. DOI: 10.1016/j.jcrysgro.2018.09.046.
  13. E Wibowo, N Ulya, Z Othaman, P Marwoto, I Sumpono, M P Aji, Sulhadi, B Astuti, M Rokhmat, Suwandi, A Ismardi, Sutisna. Effect of Substrate Orientation on the Growth Direction of In x Ga 1- x As Nanowires (NWs). IOP Conference Series: Materials Science and Engineering 2018, 395, 012003. DOI: 10.1088/1757-899X/395/1/012003.
  14. Baodan Liu, Jing Li, Wenjin Yang, Xinglai Zhang, Xin Jiang, Yoshio Bando. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications. Small 2017, 13 (45) , 1701998. DOI: 10.1002/smll.201701998.
  15. Mitchell Robson, Khalifa M Azizur-Rahman, Daniel Parent, Peter Wojdylo, David A Thompson, Ray R LaPierre. Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon. Nano Futures 2017, 1 (3) , 035001. DOI: 10.1088/2399-1984/aa9015.
  16. Pei-Nan Ni, Jin-Chao Tong, Landobasa Y.M. Tobing, Zheng-Ji Xu, Shupeng Qiu, Xiao-Hong Tang, Dao-Hua Zhang. A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD. Journal of Crystal Growth 2017, 468, 252-257. DOI: 10.1016/j.jcrysgro.2016.11.124.
  17. Pei-Nan Ni, Jin-Chao Tong, Zheng-Ji Xu, Xiao-Hong Tang, Dao-Hua Zhang. Properties of InAsSb films grown on GaSb by metal-organic chemical vapor deposition. Procedia Engineering 2017, 215, 24-30. DOI: 10.1016/j.proeng.2017.09.828.
  18. Pei-Nan Ni, Jin-Chao Tong, Landobasa Y. M. Tobing, Li Qian, Shu-Peng Qiu, Zheng-Ji Xu, Xiao-Hong Tang, Dao-Hua Zhang. Antimonide-based semiconductors for optoelectronic devices. 2016,,, 1-3. DOI: 10.1109/ICOCN.2016.7875832.
  19. U P Gomes, D Ercolani, V Zannier, J David, M Gemmi, F Beltram, L Sorba. Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon. Nanotechnology 2016, 27 (25) , 255601. DOI: 10.1088/0957-4484/27/25/255601.

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