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Concentric and Spiral Few-Layer Graphene: Growth Driven by Interfacial Nucleation vs Screw Dislocation

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    Concentric and Spiral Few-Layer Graphene: Growth Driven by Interfacial Nucleation vs Screw Dislocation
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    • Roland Yingjie Tay
      Roland Yingjie Tay
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Roland Yingjie Tay
      Orcidhttp://orcid.org/0000-0002-3341-0984
    • Hyo Ju Park
      Hyo Ju Park
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      More by Hyo Ju Park
    • Jinjun Lin
      Jinjun Lin
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Jinjun Lin
    • Zhi Kai Ng
      Zhi Kai Ng
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Zhi Kai Ng
    • Lin Jing
      Lin Jing
      School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Lin Jing
      Orcidhttp://orcid.org/0000-0003-2282-5129
    • Hongling Li
      Hongling Li
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Hongling Li
      Orcidhttp://orcid.org/0000-0002-2292-1949
    • Minmin Zhu
      Minmin Zhu
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Minmin Zhu
    • Siu Hon Tsang
      Siu Hon Tsang
      Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore 639798, Singapore
      More by Siu Hon Tsang
    • Zonghoon Lee*
      Zonghoon Lee
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      *E-mail: [email protected]
      More by Zonghoon Lee
      Orcidhttp://orcid.org/0000-0003-3246-4072
    • Edwin Hang Tong Teo*
      Edwin Hang Tong Teo
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      *E-mail: [email protected]
      More by Edwin Hang Tong Teo
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    Chemistry of Materials

    Cite this: Chem. Mater. 2018, 30, 19, 6858–6866
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    https://doi.org/10.1021/acs.chemmater.8b03024
    Published September 7, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed because of the use of metal catalysts. In this work, we show that formation of few-layer graphene (FLG) with a spiral structure driven by screw dislocation can be obtained alongside FLG having a concentric layered structure formed by interfacial nucleation (nucleation at the graphene/Cu interface) using Cu-catalyzed ambient pressure CVD. Unlike commonly reported FLG grown by interfacial nucleation where the second layer is grown independently beneath the first, the growth of a spiral structure adopts a top growth mechanism where the top layers are an extension from the initial monolayer which spirals around an axial dislocation in self-perpetuating steps. Since the same atomic orientation is preserved, the subsequent spiraling layers are stacked in an oriented AB-stacked configuration. This contrasts with FLG formed by interfacial nucleation where turbostratic stacking of the entire adlayer may exist. In both growth scenarios, the second layer (either top or bottom) can grow across the grain boundaries of the initial monolayer domains, forming partial regions with turbostratic stacking configuration due to weak interlayer van der Waals interactions. The unique interlayer coupling of FLG spirals, which enable superior conductivity along the normal of the 2D crystal with spiraling trajectories, are expected to have new and interesting nanoscale applications.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.chemmater.8b03024.

    • Figures S1–S4 showing additional Raman maps of various FLGs (PDF)

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    Chemistry of Materials

    Cite this: Chem. Mater. 2018, 30, 19, 6858–6866
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.chemmater.8b03024
    Published September 7, 2018
    Copyright © 2018 American Chemical Society
    Request reuse permissions

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