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Resonant Electron–Phonon Interaction and Its Non-Fano-Type Wavelength and Power-Dependent Raman Manifestation

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Download Hi-Res ImageDownload to MS-PowerPointCite This:J. Phys. Chem. C 2024, 128, 36, 15186-15193
    C: Physical Properties of Materials and Interfaces

    Resonant Electron–Phonon Interaction and Its Non-Fano-Type Wavelength and Power-Dependent Raman Manifestation
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    • Deb Kumar Rath
      Deb Kumar Rath
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
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      Orcidhttps://orcid.org/0009-0007-4637-3194
    • Chanchal Rani
      Chanchal Rani
      Department of Chemistry, University of Michigan, Ann Arbor, Michigan 48109, United States
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    • Shivansh Raj Pandey
      Shivansh Raj Pandey
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
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    • Love Bansal
      Love Bansal
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
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      Orcidhttps://orcid.org/0000-0003-1799-8260
    • Bhumika Sahu
      Bhumika Sahu
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
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    • Nikita Ahlawat
      Nikita Ahlawat
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
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    • Shailendra K. Saxena
      Shailendra K. Saxena
      Department of Physics & Nanotechnology, SRM Institute of Science & Technology Kattankulathur, Chennai 603203, India
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      Orcidhttps://orcid.org/0000-0001-7156-3407
    • Rajesh Kumar*
      Rajesh Kumar
      Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India
      *Email: [email protected]
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      Orcidhttps://orcid.org/0000-0001-7977-986X
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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2024, 128, 36, 15186–15193
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    https://doi.org/10.1021/acs.jpcc.4c04058
    Published August 28, 2024
    Copyright © 2024 American Chemical Society
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    Abstract

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    The presence of Fano resonance in a system often proves to be very useful in understanding various electronic and quantum properties of materials, especially in semiconductors. Although identifiable using Raman spectroscopy through the presence of Fano-type characteristics such as asymmetry and antiresonance in spectral line shape, it is difficult to unambiguously identify its presence and nature due to other factors/processes also affecting them. A wavelength- and power-dependent Raman scattering experiment, along with appropriate theoretical analysis, reveals the resonant nature of electron–phonon interaction in the Ag Raman mode (994 cm–1) in orthorhombic V2O5. The asymmetric Raman line shape with an antiresonance dip and an electronic Raman background support the presence of a Fano interaction. The theoretical fitting of experimental data quantifies the electron–phonon coupling strength by the Fano coupling parameter (q). The excitation wavelength-dependent Raman spectra appear to contradict the Fano-type behavior, which has been used to identify the resonant nature of the Fano interaction. The Fano interaction weakens on increasing the excitation power due to the involvement of anharmonic effects.

    Copyright © 2024 American Chemical Society

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    • Theoretical fitting of the Ag Raman mode and the estimated Raman parameters at different laser powers (PDF)

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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2024, 128, 36, 15186–15193
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpcc.4c04058
    Published August 28, 2024
    Copyright © 2024 American Chemical Society
    Request reuse permissions

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