Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
- Yuekun YangYuekun YangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaMore by Yuekun Yang,
- Xudong WangXudong WangState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaMore by Xudong Wang,
- Chen WangChen WangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Chen Wang,
- Yuxin SongYuxin SongState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Yuxin Song,
- Miao ZhangMiao ZhangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Miao Zhang,
- Zhongying XueZhongying XueState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Zhongying Xue,
- Shumin WangShumin WangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Shumin Wang,
- Zhongyunshen ZhuZhongyunshen ZhuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Zhongyunshen Zhu,
- Guanyu LiuGuanyu LiuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Guanyu Liu,
- Panlin LiPanlin LiState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Panlin Li,
- Linxi DongLinxi DongKey Laboratory of RF Circuits and System of Ministry of Education, College of Electronic and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Linxi Dong,
- Yongfeng MeiYongfeng MeiDepartment of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, ChinaMore by Yongfeng Mei,
- Paul K. ChuPaul K. ChuDepartment of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, ChinaMore by Paul K. Chu,
- Weida HuWeida HuState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaMore by Weida Hu,
- Jianlu Wang*Jianlu Wang*Email: [email protected]State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaMore by Jianlu Wang, and
- Zengfeng Di*Zengfeng Di*Email: [email protected]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaMore by Zengfeng Di
Abstract
GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.