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Single-Exciton Gain and Stimulated Emission Across the Infrared Telecom Band from Robust Heavily Doped PbS Colloidal Quantum Dots

Cite this: Nano Lett. 2020, 20, 8, 5909–5915
Publication Date (Web):July 14, 2020
Copyright © 2020 American Chemical Society

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    Abstract Image

    Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics, and silicon photonics. The current technology is based either on costly III–V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQDs) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability, and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with a line width of ∼14 meV. Leveraging robust electronic doping and charge-exciton interactions in PbS CQD thin films, we reach a gain threshold at the single exciton regime representing a 4-fold reduction from the theoretical limit of an 8-fold degenerate system, with a net modal gain in excess of 100 cm–1.

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    • Experimental methods, characterization methods, density of states calculations, control experiments, additional absorption spectra, XPS and UPS spectra and anlysis, FET experiments and analysis, doping stability, ASE threshold calculations, exciton dynamics models, Auger analysis, additional TA traces, additional power dependence spectra and analysis, VSL measurements, CW lasing calculations, and exciton occupancy calculations (PDF)

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