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Two-Dimensional Ultrathin Fe3Sn2 Kagome Metal with Defect-Dependent Magnetic Property
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    Two-Dimensional Ultrathin Fe3Sn2 Kagome Metal with Defect-Dependent Magnetic Property
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    • Manli Zhu
      Manli Zhu
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People’s Republic of China
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    • Qiuqiu Li
      Qiuqiu Li
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
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    • Kaiwen Guo
      Kaiwen Guo
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
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    • Bailian Chen
      Bailian Chen
      School of Design, Hunan University, Changsha 410082, People’s Republic of China
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    • Kun He
      Kun He
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
      More by Kun He
    • Chen Yi
      Chen Yi
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
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    • Ping Lu
      Ping Lu
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People’s Republic of China
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    • Xingyun Li
      Xingyun Li
      DongGuan Institute of GuangDong Institute of Metrology, Dongguan 523343, People’s Republic of China
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    • Jiwu Lu
      Jiwu Lu
      School of Design, Hunan University, Changsha 410082, People’s Republic of China
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    • Jia Li
      Jia Li
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People’s Republic of China
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    • Ruixia Wu
      Ruixia Wu
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People’s Republic of China
      More by Ruixia Wu
    • Xingqiang Liu
      Xingqiang Liu
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
    • Yuan Liu
      Yuan Liu
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
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    • Lei Liao
      Lei Liao
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
      More by Lei Liao
    • Bo Li*
      Bo Li
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People’s Republic of China
      Shenzhen Research Institute of Hunan University, Shenzhen 518063, People’s Republic of China
      *Email for B.L.: [email protected]
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    • Xidong Duan*
      Xidong Duan
      Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People’s Republic of China
      *Email for X.D.: [email protected]
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    Other Access OptionsSupporting Information (1)

    Nano Letters

    Cite this: Nano Lett. 2024, 24, 24, 7483–7490
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.4c01765
    Published June 6, 2024
    Copyright © 2024 American Chemical Society

    Abstract

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    Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.

    Copyright © 2024 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.4c01765.

    • Detailed experimental details, materials, and methods, including experimental design, instruments used, and theoretical calculation methods, and AFM images characterizing Fe3Sn2 (PDF)

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    This article is cited by 6 publications.

    1. Jian Jiang, Xiaolin Zhang, Hao Wang, Lei Yin, Yao Wen, Ruiqing Cheng, Chendong Zhang, Jun He. Epitaxial Strain Engineering for High-Temperature Ferromagnetic Iron Germanide Alloy. Nano Letters 2025, 25 (24) , 9639-9645. https://doi.org/10.1021/acs.nanolett.5c01388
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    Nano Letters

    Cite this: Nano Lett. 2024, 24, 24, 7483–7490
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.4c01765
    Published June 6, 2024
    Copyright © 2024 American Chemical Society

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