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Nanoscale Electrostatic Control of Oxide Interfaces

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Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
*E-mail: [email protected] (S.G.).
*E-mail: [email protected] (A.D.C.).
Cite this: Nano Lett. 2015, 15, 4, 2627–2632
Publication Date (Web):March 6, 2015
https://doi.org/10.1021/acs.nanolett.5b00216
Copyright © 2015 American Chemical Society

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    Abstract

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    We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO3/SrTiO3 as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultralow leakage currents, and long-term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.

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    A detailed description of the fabrication process and additional data from other top-gated devices. This material is available free of charge via the Internet at http://pubs.acs.org.

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